Carrier relaxation in InGaN∕GaN quantum wells with nanometer-scale cluster structures

2004 ◽  
Vol 85 (8) ◽  
pp. 1371-1373 ◽  
Author(s):  
Hsiang-Chen Wang ◽  
Shih-Chun Lin ◽  
Yen-Chen Lu ◽  
Yung-Chen Cheng ◽  
C. C. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Nanometer Scale ◽  
Carrier Relaxation

Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)∕GaAs quantum wells

2005 ◽  
Vol 87 (25) ◽  
pp. 252111 ◽  
Author(s):  
K. Hantke ◽  
J. D. Heber ◽  
S. Chatterjee ◽  
P. J. Klar ◽  
K. Volz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Relaxation Dynamics ◽  
Carrier Relaxation ◽  
Carrier Relaxation Dynamics

scholarly journals Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells

2003 ◽  
Vol 82 (9) ◽  
pp. 1416-1418 ◽  
Author(s):  
Ümit Özgür ◽  
Henry O. Everitt ◽  
Stacia Keller ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Relaxation ◽  
Ultrafast Carrier

Well-in-Well Structure for High-Speed Carrier Relaxation into Quantum Wells

2011 ◽  
Vol 50 (8R) ◽  
pp. 080209
Author(s):  
Yasutaka Higa ◽  
Mikio Sorimachi ◽  
Takuya Nishinome ◽  
Tomoyuki Miyamoto
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Carrier Relaxation

Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Evoy ◽  
C. K. Harnett ◽  
S. Keller ◽  
U. K. Mishra ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Scanning Tunneling Microscope ◽  
Multiple Quantum Well ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Multiple Quantum ◽  
Proof Of Concept ◽  
Cross Sectional ◽  
Tunneling Microscope ◽  
Nm Range

AbstractWe present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of Ld=30–55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30–100 nm wide smooth fluctuations of luminescence.

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