Unsteady motion of laser ablation plume by vortex induced by the expansion of curved shock wave

2017 ◽  
Author(s):  
D. T. Tran ◽  
K. Mori
1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.


2005 ◽  
Vol 97 (6) ◽  
pp. 064904 ◽  
Author(s):  
M. W. Stapleton ◽  
A. P. McKiernan ◽  
J.-P. Mosnier

1996 ◽  
Vol 96-98 ◽  
pp. 186-191 ◽  
Author(s):  
F. Grangeon ◽  
H. Sassoli ◽  
W. Marine ◽  
M. Autric

2001 ◽  
Vol 89 (7) ◽  
pp. 4096-4098 ◽  
Author(s):  
Samuel S. Mao ◽  
Xianglei Mao ◽  
Ralph Greif ◽  
Richard E. Russo

2006 ◽  
Vol 88 (6) ◽  
pp. 061120 ◽  
Author(s):  
Tetsuo Sakka ◽  
Hisayuki Oguchi ◽  
Satoru Masai ◽  
Kohichi Hirata ◽  
Yukio H. Ogata ◽  
...  

2008 ◽  
Vol 79 (2) ◽  
pp. 023902 ◽  
Author(s):  
Dennis L. Paisley ◽  
Sheng-Nian Luo ◽  
Scott R. Greenfield ◽  
Aaron C. Koskelo

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