Lanthanide monopnictide nanoparticles within III-V semiconductors for photoconductive switches and other terahertz devices (Conference Presentation)

2017 ◽  
Author(s):  
Joshua M. Zide
Keyword(s):  
Terahertz Devices ◽  
Photoconductive Switches

Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications

1999 ◽  
Vol 86 (3) ◽  
pp. 1754-1758 ◽  
Author(s):  
N. E. Islam ◽  
E. Schamiloglu ◽  
C. B. Fleddermann ◽  
J. S. H. Schoenberg ◽  
R. P. Joshi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Power ◽  
Photoconductive Switches

Optical response of amorphous Ge photoconductive switches with YBCO transmission lines

2003 ◽  
Vol 16 (12) ◽  
pp. 1475-1478 ◽  
Author(s):  
I Kawayama ◽  
T Miyadera ◽  
Y Doda ◽  
T Kiwa ◽  
H Murakami ◽  
...  
Keyword(s):  
Transmission Lines ◽  
Optical Response ◽  
Photoconductive Switches

Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1387-1389 ◽  
Author(s):  
Taro Itatani ◽  
Kazuhito Segawa ◽  
Kazuhiko Matsumoto ◽  
Masami Ishii ◽  
Tadashi Nakagawa ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Atomic Force ◽  
Metal Semiconductor Metal ◽  
Photoconductive Switches

scholarly journals Dual-Tunable Polarization Insensitive Electromagnetically Induced Transparency in Metamaterials

2021 ◽  
Author(s):  
Renxia Ning ◽  
Zhiqiang Xiao ◽  
Zhenhai Chen ◽  
Wei Huang
Keyword(s):  
Vanadium Dioxide ◽  
Mode Coupling ◽  
Slow Light ◽  
Chemical Potential ◽  
Electromagnetically Induced Transparency ◽  
Dark Mode ◽  
Potential Applications ◽  
Polarization Insensitive ◽  
Terahertz Devices ◽  
Induced Transparency

AbstractA multilayer structure of a square ring of graphene with nesting vanadium dioxide (VO2) was investigated in this study. This structure exhibits electromagnetically induced transparency (EIT), which stems from a bright mode coupling with a dark mode. The permittivity values of graphene and VO2 can be modulated via chemical potential and temperature, respectively. The EIT effect can be tuned based on the chemical potential of graphene and temperature of VO2, resulting in a dual-tunable EIT effect. Simulation results confirmed that this dual-tunable EIT phenomenon is insensitive to polarization. These results may have potential applications in terahertz devices, such as slow light devices, switching devices, and sensors.

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