Holographic tracking of quantized intra-film segments during interferometric laser processing of SiOx thin films (Conference Presentation)

2017 ◽  
Author(s):  
Stephen Ho ◽  
Matthias Domke ◽  
Heinz P. Huber ◽  
Peter R. Herman
Keyword(s):  
Thin Films ◽  
Laser Processing

FS laser processing of bio-polymer thin films for studying cell-to-substrate specific response

2016 ◽  
Vol 382 ◽  
pp. 178-191 ◽  
Author(s):  
A. Daskalova ◽  
Chandra S.R. Nathala ◽  
P. Kavatzikidou ◽  
A. Ranella ◽  
R. Szoszkiewicz ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Processing ◽  
Polymer Thin Films ◽  
Specific Response ◽  
Fs Laser

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

Laser processing and characterization of ZnS–Cu thin films

2005 ◽  
Vol 247 (1-4) ◽  
pp. 434-439 ◽  
Author(s):  
V. Khomchenko ◽  
L. Fedorenko ◽  
N. Yusupov ◽  
V. Rodionov ◽  
Yu. Bacherikov ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Processing

scholarly journals Laser-processing of VO2 thin films synthesized by polymer-assisted-deposition

2017 ◽  
Vol 397 ◽  
pp. 152-158 ◽  
Author(s):  
Eric Breckenfeld ◽  
Heungsoo Kim ◽  
Edward P. Gorzkowski ◽  
Thomas E. Sutto ◽  
Alberto Piqué
Keyword(s):  
Thin Films ◽  
Laser Processing ◽  
Vo2 Thin Films

LASER PROCESSING OF HIGH TEMPERATURE SUPERCONDUCTING THIN FILMS

1990 ◽  
Vol 5 (4) ◽  
pp. 529-548 ◽  
Author(s):  
R.C. Estler ◽  
S. Foltyn ◽  
A.R. Garcia ◽  
R.E. Muenchausen ◽  
N.S. Nogar ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Laser Processing ◽  
Superconducting Thin Films ◽  
High Temperature Superconducting

Pulse laser processing of metal thin films on glass substrates

2004 ◽  
Author(s):  
Gennady M. Mikheev ◽  
Ruslan G. Zonov ◽  
Dmitry G. Kaluzhny
Keyword(s):  
Thin Films ◽  
Pulse Laser ◽  
Laser Processing ◽  
Metal Thin Films ◽  
Glass Substrates

Pulsed Laser Processing of Electrodeposited CuInSe2 Photovoltaic Absorber Thin Films

2010 ◽  
Vol 1268 ◽  
Author(s):  
Ashish Bhatia ◽  
Phillip Dale ◽  
Matt Nowell ◽  
Michael Scarpulla
Keyword(s):  
Thin Films ◽  
Electrochemical Deposition ◽  
Laser Processing ◽  
Laser Annealing ◽  
Thermal Evaporation ◽  
Pulsed Laser ◽  
Ultra Violet ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
The Cost

AbstractCuInSe2 (CIS) is commercially processed using energy intensive vacuum processes such as sputtering and thermal evaporation followed by thermal annealing. In order to reduce the cost of fabricating CIS photovoltaic absorber layers we need fast and cheap processing methods. We have investigated the use of non-vacuum electrochemical deposition (ED) followed by ultra violet pulsed laser annealing (UV-PLA). We report here on the results of ns pulsed KrF irradiation of ED CIS films and ED CIS films which were first annealed in a Se atmosphere.

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