Pulse laser processing of metal thin films on glass substrates

2004 ◽  
Author(s):  
Gennady M. Mikheev ◽  
Ruslan G. Zonov ◽  
Dmitry G. Kaluzhny
2010 ◽  
Vol 97-101 ◽  
pp. 1768-1771 ◽  
Author(s):  
Dong Hun Kim ◽  
Riichi Murakami ◽  
Yun Hae Kim ◽  
Kyung Man Moon ◽  
Seung Jung An ◽  
...  

In order to study the characteristics of multilayer thin films with a ZnO/ metal/ ZnO structure the manufacture of the thin films was performed by a dc (direct current) magnetron sputtering system on slide glass substrates. The ZnO thin films were manufactured with the thicknesses of 30 nm and 50 nm. Three kinds of metals (Ag, Al and Cu) were deposited with the thicknesses of 4 nm, 8 nm, 12 nm and 16 nm. The electrical and optical properties of the manufactured thin films were then observed. As a result, the multilayer thin films with an Ag layer represented the most excellent electrical conductivity. This is due to the difference in the fundamental electrical properties of each of the metals. The structures of the metal particles deposited on the ZnO thin films were observed by an SEM (scanning electron microscope). The thin films exhibited a continuous structure with regular spaces between the metal particles. This resulted in an increase of transmittance. This is considered by the decrease of scattering and of light absorption on thin films with a continuous structure.


2010 ◽  
Vol 519 (1) ◽  
pp. 430-433 ◽  
Author(s):  
Antti J. Niskanen ◽  
Tiina Ylinen-Hinkka ◽  
Matti Pusa ◽  
Sakari Kulmala ◽  
Sami Franssila

2010 ◽  
Vol T139 ◽  
pp. 014005 ◽  
Author(s):  
Ching-Yen Ho ◽  
Kuang-Ming Hung ◽  
Mao-Yu Wen ◽  
Je-Ee Ho

2015 ◽  
Vol 336 ◽  
pp. 112-117 ◽  
Author(s):  
C. Constantinescu ◽  
L.N.D. Kallepalli ◽  
P. Delaporte ◽  
O. Utéza ◽  
D. Grojo

2010 ◽  
Vol 108 (10) ◽  
pp. 103907 ◽  
Author(s):  
Yuki Inaba ◽  
Iulica Zana ◽  
Caleb Swartz ◽  
Yukiko Kubota ◽  
Tim Klemmer ◽  
...  

1984 ◽  
Vol 35 ◽  
Author(s):  
C. E. Bleil ◽  
J. R. Troxell

ABSTRACTLaser processing of thin films of amorphous or polycrystalline silicon on insulator substrates, such as the glass normally used for liquid crystal displays, frequently leads to film thickness variations which are unacceptable for device fabrication. Some thickness variations are caused by the high surface tension of molten silicon and the poor adhesion of the silicon to the substrate. Techniques to reduce this problem by increasing the adhesion of the film to silicon dioxide coated Corning 7059 glass substrates have been investigated. Two different approaches were used. First, silicon ions were implanted into the silicon-glass interface to increase the direct bonding of the silicon to the silicon dioxide. Second, layers of material known to exhibit better adhesion to both silicon and silicon dioxide were introduced between the silicon film and the glass substrate. Both techniques produced films which, after subsequent laser processing, showed significantly reduced thickness variations. These procedures make it possible to laser process thin films of silicon on Corning 7059 glass substrates under conditions which produce large grain polysilicon films without producing unacceptably large thickness variations or film cracking.


Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.


2010 ◽  
Vol 48 (2) ◽  
pp. 163-168 ◽  
Author(s):  
Hyunkwon Shin ◽  
Hyeongjae Lee ◽  
Hyeongjae Yoo ◽  
Ki-Soo Lim ◽  
Myeongkyu Lee

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