Hole-burning effect and photochromism of color centers in synthetic diamonds

1990 ◽  
Author(s):  
Yosio Nisida ◽  
Yoshimi Mita
Keyword(s):  
Color Centers ◽  
Hole Burning ◽  
Synthetic Diamonds

scholarly journals Hole burning spectroscopy ofR′ aggregate color centers in polycrystalline LiF thin films using a GaAlAs diode laser

1983 ◽  
Vol 43 (12) ◽  
pp. 1102-1104 ◽  
Author(s):  
Carmen Ortiz ◽  
Carmen N. Afonso ◽  
Peter Pokrowsky ◽  
Gary C. Bjorklund
Keyword(s):  
Thin Films ◽  
Diode Laser ◽  
Color Centers ◽  
Hole Burning

Memory and neural networks on the basis of color centers in solids

2009 ◽  
Vol 390 (11) ◽  
Author(s):  
Albrecht Winnacker ◽  
Andres Osvet
Keyword(s):  
Neural Networks ◽  
High Speed ◽  
Optical Data ◽  
Color Centers ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Data Recording ◽  
Spectral Hole ◽  
Set Up ◽  
High Degree

Abstract Optical data recording is one of the most widely used and efficient systems of memory in the non-living world. The application of color centers in this context offers not only systems of high speed in writing and read-out due to a high degree of parallelism in data handling but also a possibility to set up models of neural networks. In this way, systems with a high potential for image processing, pattern recognition and logical operations can be constructed. A limitation to storage density is given by the diffraction limit of optical data recording. It is shown that this limitation can at least in principle be overcome by the principle of spectral hole burning, which results in systems of storage capacities close to the human brain system.

Persistent spectral hole burning for R’ color centers in LiF crystals: Statics, dynamics, and external-field effects

1986 ◽  
Vol 33 (8) ◽  
pp. 5702-5716 ◽  
Author(s):  
W. E. Moerner ◽  
P. Pokrowsky ◽  
F. M. Schellenberg ◽  
G. C. Bjorklund
Keyword(s):  
External Field ◽  
Color Centers ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Field Effects ◽  
Spectral Hole

Reflection electron microscopy of as-grown diamond surfaces

1993 ◽  
Vol 51 ◽  
pp. 1006-1007
Author(s):  
Z.L. Wang ◽  
J. Bentley ◽  
R.E. Clausing ◽  
L. Heatherly ◽  
L.L. Horton
Keyword(s):  
Electron Microscopy ◽  
Synthetic Diamond ◽  
High Energy ◽  
Dark Field ◽  
Reverse Direction ◽  
Diamond Surfaces ◽  
Grain Sizes ◽  
Synthetic Diamonds ◽  
De Beers ◽  
Reflection Electron Microscopy

It has been found that the abrasion of diamond-on-diamond depends on the crystal orientation. For a {100} face, the friction coefficient for sliding along <011> is much higher than that along <001>. For a {111} face, the abrasion along <11> is different from that in the reverse direction <>. To interpret these effects, a microcleavage mechanism was proposed in which the {100} and {111} surfaces were assumed to be composed of square-based pyramids and trigonal protrusions, respectively. Reflection electron microscopy (REM) has been applied to image the microstructures of these diamond surfaces.{111} surfaces of synthetic diamond:The synthetic diamonds used in this study were obtained from the De Beers Company. They are in the as-grown condition with grain sizes of 0.5-1 mm without chemical treatment or mechanical polishing. By selecting a strong reflected beam in the reflection high-energy electron diffraction (RHEED) pattern, the dark-field REM image of the surface is formed (Fig. 1).

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

As-grown, green synthetic diamonds

2005 ◽  
Vol 29 (7) ◽  
pp. 387-394
Author(s):  
Christopher M. Breeding ◽  
James E. Shigley ◽  
Andy H. Shen
Keyword(s):  
Synthetic Diamonds

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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