Persistent spectral hole burning for R’ color centers in LiF crystals: Statics, dynamics, and external-field effects

1986 ◽  
Vol 33 (8) ◽  
pp. 5702-5716 ◽  
Author(s):  
W. E. Moerner ◽  
P. Pokrowsky ◽  
F. M. Schellenberg ◽  
G. C. Bjorklund
Keyword(s):  
External Field ◽  
Color Centers ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Field Effects ◽  
Spectral Hole

Memory and neural networks on the basis of color centers in solids

2009 ◽  
Vol 390 (11) ◽  
Author(s):  
Albrecht Winnacker ◽  
Andres Osvet
Keyword(s):  
Neural Networks ◽  
High Speed ◽  
Optical Data ◽  
Color Centers ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Data Recording ◽  
Spectral Hole ◽  
Set Up ◽  
High Degree

Abstract Optical data recording is one of the most widely used and efficient systems of memory in the non-living world. The application of color centers in this context offers not only systems of high speed in writing and read-out due to a high degree of parallelism in data handling but also a possibility to set up models of neural networks. In this way, systems with a high potential for image processing, pattern recognition and logical operations can be constructed. A limitation to storage density is given by the diffraction limit of optical data recording. It is shown that this limitation can at least in principle be overcome by the principle of spectral hole burning, which results in systems of storage capacities close to the human brain system.

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

scholarly journals Erratum: Suppressing decoherence in quantum plasmonic systems by the spectral-hole-burning effect [Phys. Rev. A 103 , 053517 (2021)]

2021 ◽  
Vol 104 (1) ◽  
Author(s):  
Jia-Bin You ◽  
Xiao Xiong ◽  
Ping Bai ◽  
Zhang-Kai Zhou ◽  
Wan-Li Yang ◽  
...  
Keyword(s):  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole

Mechanical spectral hole burning in glassy polymers—Investigation of polycarbonate, a material with weak β-relaxation

2021 ◽  
Vol 154 (12) ◽  
pp. 124904
Author(s):  
Satish Chandra Hari Mangalara ◽  
Shreejaya Paudel ◽  
Gregory B. McKenna
Keyword(s):  
Glassy Polymers ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole ◽  
Β Relaxation

Broadband microwave imaging with spectral hole burning for squint compensation

2005 ◽  
Author(s):  
Benjamin M. Braker ◽  
Youzhi Li ◽  
Donghua Gu ◽  
Frisco Schlottau ◽  
Kelvin H. Wagner
Keyword(s):  
Microwave Imaging ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole
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