Use of wafer curvature measurement (WCM) techniques in the determination of the process window of positive DUV resists

1995 ◽  
Author(s):  
Patrick J. Paniez ◽  
Andre Schiltz
Keyword(s):  
Process Window ◽  
Wafer Curvature ◽  
Curvature Measurement

scholarly journals Determination of Stresses in Incrementally Deposited Films From Wafer-Curvature Measurements

2020 ◽  
Vol 87 (10) ◽  
Author(s):  
Zhaoxia Rao ◽  
Hanxun Jin ◽  
Alison Engwall ◽  
Eric Chason ◽  
Kyung-Suk Kim
Keyword(s):  
Residual Stress ◽  
Finite Thickness ◽  
Deposition Process ◽  
Wafer Curvature ◽  
Curvature Measurement ◽  
Stressed Layer ◽  
Relaxation Stress ◽  
Curvature Measurements ◽  
Deposited Films

Abstract We report closed-form formulas to calculate the incremental-deposition stress, the elastic relaxation stress, and the residual stress in a finite-thickness film from a wafer-curvature measurement. The calculation shows how the incremental deposition of a new stressed layer to the film affects the amount of the film/wafer curvature and the stress state of the previously deposited layers. The formulas allow the incremental-deposition stress and the elastic relaxation to be correctly calculated from the slope of the measured curvature versus thickness for arbitrary thicknesses and biaxial moduli of the film and the substrate. Subtraction of the cumulative elastic relaxation from the incremental-deposition stress history results in the residual stress left in the film after the whole deposition process. The validities of the formulas are confirmed by curvature measurements of electrodeposited Ni films on substrates with different thicknesses.

Limits of strain relaxation in InGaAs∕GaAs probed in real time by in situ wafer curvature measurement

2005 ◽  
Vol 98 (7) ◽  
pp. 073532 ◽  
Author(s):  
C. Lynch ◽  
E. Chason ◽  
R. Beresford ◽  
L. B. Freund ◽  
K. Tetz ◽  
...  
Keyword(s):  
Real Time ◽  
Strain Relaxation ◽  
Wafer Curvature ◽  
Curvature Measurement

scholarly journals Construction of Process Window to Predict Hardness in Tailored Tool Thermomechanical Treatment and its Application

Metals ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 50
Author(s):  
Jae-Hong Kim ◽  
Seon-Bong Lee ◽  
Byung-Min Kim
Keyword(s):  
Thermomechanical Treatment ◽  
Process Parameters ◽  
Hot Stamping ◽  
Process Window ◽  
Shaped Part ◽  
Hardness Prediction ◽  
Artificial Neural Network Ann ◽  
Quench Factor Analysis ◽  
Good Agreement

Recently, in order to improve crashworthiness and achieve weight reduction of car body, a hot stamping process has been applied to the production of the part with tailored properties using tailored tool thermomechanical treatment. In the tailored tool thermomechanical treatment process, process parameters influence the mechanical properties of final product such as strength and hardness. Therefore, the prediction of hardness for final product is very important to manufacture hot-stamped part considering various process parameters. The purpose of this study is to propose a process window, which can predict hardness for various process parameters in tailored tool thermomechanical treatment. To determine the process window, finite element (FE) simulation coupled with quench factor analysis (QFA) has been performed for combinations of various process parameters. Subsequently, the process window was constructed through the training of artificial neural network (ANN) and experiment of tailored tool thermomechanical treatment for hat-shaped part was performed to verify effectiveness of hardness prediction. Then, the process parameters were determined from process window for hot stamping of the hat-shaped part with the required distribution of hardness. Hardness predicted by process window was in good agreement with measured one within 3.1% error in additional experiment. Therefore, the suggested process window can be used efficiently for hardness prediction and determination of process parameters in tailored tool thermomechanical treatment of hot-stamping parts.

Stresses in Passivated Films

1990 ◽  
Vol 188 ◽  
Author(s):  
Paul A. Flinn
Keyword(s):  
Tensile Stress ◽  
Accurate Determination ◽  
Silicon Oxynitride ◽  
X Ray Diffraction ◽  
X Ray ◽  
Curvature Measurement ◽  
Formation Of Cracks ◽  
Patterned Films ◽  
Strain Tensors

ABSTRACTAlthough wafer curvature measurement provides a rapid and accurate determination of stress in a uniform thin film, the technique is not applicable to patterned films. To study the stress in metal lines, and the effect of passivation on that stress, it is necessary to use X-ray diffraction. To obtain the sensitivity and precision required, a generalized focusing diffractometer (GFD), that had been developed especially for work on thin films, was used in this study.The elastic strain tensors for aluminum and aluminum-silicon films and patterned lines were determined by X-ray diffraction. The corresponding stress tensors were calculated with the use of the known elastic constants of aluminum. The effect of various oxide and oxynitride passivations was investigated. Passivation over uniform metal films has very little effect, while passivation over patterned metal results in substantial triaxial tensile stress in the metal. Contrary to the conventional wisdom, high compressive stress in the passivation does not result in additional tensile stress in the metal. A possible explanation for the frequently observed deleterious effect (increased tendency for formation of cracks and voids) of highly compressive silicon nitride and silicon oxynitride passivations will be discussed.

A novel setup for wafer curvature measurement at very high heating rates

2017 ◽  
Vol 88 (2) ◽  
pp. 024709 ◽  
Author(s):  
T. Islam ◽  
J. Zechner ◽  
M. Bernardoni ◽  
M. Nelhiebel ◽  
R. Pippan
Keyword(s):  
Heating Rates ◽  
Wafer Curvature ◽  
Curvature Measurement ◽  
High Heating ◽  
Very High

In situ wafer curvature measurement and strain control of AlInN/GaN distributed Bragg reflectors

2020 ◽  
Vol 13 (5) ◽  
pp. 055506
Author(s):  
Kei Hiraiwa ◽  
Wataru Muranaga ◽  
Sho Iwayama ◽  
Tetsuya Takeuchi ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Strain Control ◽  
Wafer Curvature ◽  
Curvature Measurement
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