Focused ion beam deposition of new materials: dielectric films for device modification and mask repair, and tantalum films for x-ray mask repair

Author(s):  
Diane K. Stewart ◽  
Andrew F. Doyle ◽  
J. David Casey, Jr.
1997 ◽  
Vol 485 ◽  
Author(s):  
H. R. Khan ◽  
H. Frey

AbstractSilicon films of thicknesses (100 – 800 nm) are deposited on Si[111] substrate at 490°C using Si+ ions of energies (20 – 70 eV) from Silane plasma. The structure of the films depends on the energy of Si+ ions and the film grows epitaxially for ion energy <20 eV. Si films are analyzed by X-ray diffraction technique.


1987 ◽  
Vol 110 ◽  
Author(s):  
B. L. Barthell ◽  
T. A. Archuleta ◽  
Ram Kossowsky

AbstractCalcium hydroxyapatite has been sputtered on glass and Ti-6Al-4V substrates using a 1.5-kV argon ion beam. The films have been examined by x-ray diffraction analysis, energy dispersive spectroscopy, scanning electron microscopy, and adhesion testing. Results of this experimentation are presented.


2012 ◽  
Vol 626 ◽  
pp. 867-877 ◽  
Author(s):  
Q. Humayun ◽  
U. Hashim

Fabrication techniques for Metal-molecule-metal junction electrodes suitable to study electron tunneling through metal junctions are reviewed. The applications of current technologies such as mechanical break junction, electromigration, shadow mask lithography, focused ion beam deposition, chemical and electrochemical plating, electron-beam lithography, in fabricating vacant junction electrodes are briefly described. For biomolecular sensing applications, the size of the junction electrodes must be small enough to allow the biomolecule inserted into the junction space to connect both leads to keep the molecules in a relaxed and undistorted state. A significant advantage of using Metal-molecule-metal junction electrodes devices is that the junction can be characterized with and without the molecule in place. Any electrical artifacts introduced by the electrode fabrication process are more easily deconvoluted from the intrinsic properties of the molecule.


1995 ◽  
Vol 396 ◽  
Author(s):  
Kevin G. Ressler ◽  
Neville Sonnenberg ◽  
Michael J. Cima

AbstractSingle crystal-like yttria-stabilized zirconia (YSZ) thin films have been deposited on amorphous quartz, polycrystalline zirconia, single crystal Si, and Hastelloy substrates using dual ion beam deposition (IBAD). These films are highly crystallographically aligned both normal to and within the film plane. The films are deposited at low substrate temperatures (<200°C), and the film orientation is substrate independent. θ-2θ X-ray diffraction, X-ray rocking curves, X-ray pole figures and X-ray phi scans are used to evaluate the film structure. High resolution cross-sectional TEM is used to examine the evolution of crystallographic film alignment on an amorphous quartz substrate. The data suggest that the evolution of biaxial alignment is nucleation controlled under these conditions.


2021 ◽  
pp. 150355
Author(s):  
Shuo Zhang ◽  
Gediminas Gervinskas ◽  
Yang Liu ◽  
Ross K.W. Marceau ◽  
Jing Fu

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