Understanding of PS-b-PMMA phase segregation under laser-induced millisecond thermal annealing

2015 ◽  
Author(s):  
Alan G. Jacobs ◽  
Clemens Liedel ◽  
Christopher K. Ober ◽  
Michael O. Thompson
Keyword(s):  
Thermal Annealing ◽  
Phase Segregation

Kinetics of Block Copolymer Phase Segregation during Sub-millisecond Transient Thermal Annealing

2016 ◽  
Vol 49 (17) ◽  
pp. 6462-6470 ◽  
Author(s):  
Alan G. Jacobs ◽  
Clemens Liedel ◽  
Hui Peng ◽  
Linxi Wang ◽  
Detlef-M. Smilgies ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Thermal Annealing ◽  
Phase Segregation ◽  
Transient Thermal ◽  
Kinetics Of

Real-Time Investigation of Crystallization and Phase-Segregation Dynamics in P3HT:PCBM Solar Cells During Thermal Annealing

2011 ◽  
Vol 21 (9) ◽  
pp. 1701-1708 ◽  
Author(s):  
Tiziano Agostinelli ◽  
Samuele Lilliu ◽  
John G. Labram ◽  
Mariano Campoy-Quiles ◽  
Mark Hampton ◽  
...  
Keyword(s):  
Solar Cells ◽  
Real Time ◽  
Thermal Annealing ◽  
Phase Segregation

scholarly journals PEDOT:PSS Morphostructure and Ion-To-Electron Transduction and Amplification Mechanisms in Organic Electrochemical Transistors

Materials ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 9 ◽  
Author(s):  
Pasquale D’Angelo ◽  
Giuseppe Tarabella ◽  
Agostino Romeo ◽  
Simone Marasso ◽  
Alessio Verna ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
System Integration ◽  
Phase Segregation ◽  
Experimental Characterization ◽  
Polystyrene Sulfonate ◽  
Morphology And Structure ◽  
Out Of Plane ◽  
Film Microstructure ◽  
Conformational Rearrangements ◽  
Organic Electrochemical Transistors

Organic electrochemical transistors (OECTs) represent a powerful and versatile type of organic-based device, widely used in biosensing and bioelectronics due to potential advantages in terms of cost, sensitivity, and system integration. The benchmark organic semiconductor they are based on is poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), the electrical properties of which are reported to be strongly dependent on film morphology and structure. In particular, the literature demonstrates that film processing induces morphostructural changes in terms of conformational rearrangements in the PEDOT:PSS in-plane phase segregation and out-of-plane vertical separation between adjacent PEDOT-rich domains. Here, taking into account these indications, we show the thickness-dependent operation of OECTs, contextualizing it in terms of the role played by PEDOT:PSS film thickness in promoting film microstructure tuning upon controlled-atmosphere long-lasting thermal annealing (LTA). To do this, we compared the LTA-OECT response to that of OECTs with comparable channel thicknesses that were exposed to a rapid thermal annealing (RTA). We show that the LTA process on thicker films provided OECTs with an enhanced amplification capability. Conversely, on lower thicknesses, the LTA process induced a higher charge carrier modulation when the device was operated in sensing mode. The provided experimental characterization also shows how to optimize the OECT response by combining the control of the microstructure via solution processing and the effect of postdeposition processing.

scholarly journals Thermal annealing of amorphous Ti–Si–O thin films

2008 ◽  
Vol 23 (3) ◽  
pp. 755-759 ◽  
Author(s):  
Abbas Hodroj ◽  
Odette Chaix-Pluchery ◽  
Marc Audier ◽  
Ulrich Gottlieb ◽  
Jean-Luc Deschanvres
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Phase Segregation ◽  
Deposition Process ◽  
Film Structure ◽  
Transmission Electron Microscopy Analysis ◽  
Transmission Electron ◽  
Before And After ◽  
Electron Microscopy Analysis

Ti–Si–O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analyzed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain x-ray amorphous after annealing, whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well-crystallized anatase TiO2. Crystallization of anatase TiO2 is also clearly shown in the Raman spectra. Transmission electron microscopy analysis indicates that anatase TiO2 nanograins are embedded in a SiO2 matrix in an alternated SiO2/TiO2 multilayer structure.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Optical and Electrical Characteristics of Amorphous InGaZnO after Thermal Annealing

2008 ◽  
Author(s):  
Satoshi Taniguchi ◽  
Norihiko Yamaguchi ◽  
Takao Miyajima ◽  
Masao Ikeda
Keyword(s):  
Thermal Annealing ◽  
Electrical Characteristics ◽  
Amorphous Ingazno
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