Enhanced red luminescence and improved crystallinity in NaEu(WO4)2 phosphors: an electron beam irradiation study

2018 ◽  
Vol 42 (4) ◽  
pp. 2726-2732 ◽  
Author(s):  
Archana K. Munirathnappa ◽  
Vikash C. Petwal ◽  
Jishnu Dwivedi ◽  
Nalini G. Sundaram
Keyword(s):  
Electron Beam ◽  
Band Gap ◽  
Fluorescence Intensity ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Band Gap Engineering ◽  
New Strategy ◽  
Red Luminescence ◽  
Dose Dependent

Band gap engineering in NaEu(WO4)2 red phospors via dose-dependent EB irradiation: a new strategy for improving fluorescence intensity.

scholarly journals Enhanced Optical and Electrical Properties of Ti Doped In2O3 thin Films Treated by Post-deposition Electron Beam Irradiation

2020 ◽  
Vol 58 (11) ◽  
pp. 793-797
Author(s):  
Su-Hyeon Choe ◽  
Yun-Je Park ◽  
Yu-Sung Kim ◽  
Byung-Chul Cha ◽  
Sung-Bo Heo ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Band Gap ◽  
Carrier Density ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Visible Transmittance ◽  
Irradiation Energy ◽  
Rf Magnetron Sputter ◽  
Magnetron Sputter

Transparent and conductive Ti doped In<sub>2</sub>O<sub>3</sub> (TIO) films were prepared on slide glass substrate using a radio frequency (RF) magnetron sputter and then subjected to Transparent and conductive Ti doped In<sub>2</sub>O<sub>3</sub> (TIO) films were prepared on a glass slide substrate using radio frequency (RF) magnetron sputter. The film surface was then subjected to intense electron beam irradiation, to study the influence of incident energy on the visible transmittance and electrical resistivity of the films. All x-ray diffraction plots exhibited some diffraction peaks of the cubic bixbyite In<sub>2</sub>O<sub>3</sub> (222), (400), (332), (431), (440), and (444) planes regardless of the electron irradiation energy, while the characteristic diffraction peak for crystalline TiO<sub>2</sub> did not appear even when irradiated at 1500 eV. In atomic force microscope analysis, the surface roughness of the as deposited TIO films was found to be 0.63 nm. As the electron irradiation energy was increased up to 1500 eV, the root mean square roughness decreased down to 0.36 nm. The films electron irradiated at 1500 eV showed higher visible transmittance of 83.2% and the lower resistivity of 6.4 × 10<sup>-4</sup> Ωcm compared to the other films. From the electrical properties and optical band gap observation, it is supposed that the band gap shift is related to the carrier density. The band gap enlarged from 4.013 to 4.108 eV, along with an increase in carrier density from 9.82 × 10<sup>19</sup> to 3.22 × 10<sup>20</sup> cm<sup>-3</sup>.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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