AbstractThis paper deals with some results of research in SLS performed in the excimer laser laboratory of TRINITI research institute, Russia, where different types of excimer lasers have been developed and manufactured. The research used a new simple SLS approach based on single-axis (i.e., cylinder) projection optics. The method employs a long single melting line extended many centimeters in length. The line is formed by projection through a single slit in a bulk metal mask. Some aspects of the efficiency, potential, and technical challenge of the method are discussed. This method is particularly useful with low pulse energy and high frequency excimer lasers, and one of the most efficient ways of providing directionally crystallized Si films over a large area. Several types of excimer lasers were tested for the SLS technique. It was found that among various parameters, pulse duration is a more important one, e.g., an increase in pulse duration from 25 to 150 ns results in enlargement of lateral growth distance by about three times.
The characteristics of a laser plasma created by a high intensity UV excimer laser were investigated. The UV laser plasma was used as a switch for control of the laser pulse duration for the first time. An X-ray preionized XeCl laser pulse duration can be changed from 10 to 85 ns. This technique is useful for many applications of excimer lasers requiring various pulse durations.
Pulse duration effect on photoelectron spectrum of atom irradiated by strong high frequency laser