Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C)

Rapid thermal processing using single wafer rapid thermal furnace

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) ◽

10.1109/iwjt.2001.993828 ◽

2002 ◽

Author(s):

T. Fukada ◽

Woo Sik Yoo ◽

Y. Hiraga ◽

N. Takahashi

Keyword(s):

Thermal Processing ◽

Rapid Thermal Processing

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Improvement of dosimetry monitoring by Therma-Wave signal in indium implantation

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) ◽

10.1109/iwjt.2001.993831 ◽

2002 ◽

Author(s):

M. Sano ◽

M. Harada ◽

M. Kabasawa ◽

F. Sato ◽

M. Sugitani

Keyword(s):

Wave Signal

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Integration of ultra-shallow junctions in sub-0.1 μm CMOS transistors : what kind of process for a "safe" advanced technology?

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) ◽

10.1109/iwjt.2001.993820 ◽

2002 ◽

Author(s):

D. Lenoble ◽

A. Halimaoui ◽

O. Kermarrec ◽

Y. Campidelli ◽

D. Bensahel ◽

...

Keyword(s):

Advanced Technology ◽

Cmos Transistors ◽

Shallow Junctions ◽

Ultra Shallow Junctions

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Co-implantation of boron and fluorine in silicon

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) ◽

10.1109/iwjt.2001.993826 ◽

2002 ◽

Cited By ~ 1

Author(s):

L.S. Robertson ◽

J. Jacques ◽

K.S. Jones ◽

M.E. Law ◽

D.F. Downey ◽

...

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Reduction of threshold voltage fluctuation of p-MOSFETs by antimony super steep retrograde well channel

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) ◽

10.1109/iwjt.2001.993814 ◽

2002 ◽

Cited By ~ 2

Author(s):

N. Kawakami ◽

K. Egusa ◽

K. Shibahara

Keyword(s):

Threshold Voltage ◽

Voltage Fluctuation

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Combination of germanium preamorphization and sub-keV boron implantation for source/drain extension of pMOSFETs

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) ◽

10.1109/iwjt.2001.993821 ◽

2002 ◽

Cited By ~ 1

Author(s):

K. Adachi ◽

K. Ohuchi ◽

Y. Toyoshima

Keyword(s):

Boron Implantation

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Surface concentration of primary ion species and its effect to depth profiling in SIMS analyses

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) ◽

10.1109/iwjt.2001.993823 ◽

2002 ◽

Author(s):

S. Yoshikawa ◽

K. Tsukamoto

Keyword(s):

Depth Profiling ◽

Surface Concentration ◽

Ion Species

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Stencil mask ion implantation technology for sub 100 nm technology node

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) ◽

10.1109/iwjt.2001.993816 ◽

2002 ◽

Author(s):

T. Shibata ◽

K. Suguro ◽

K. Sugihara ◽

T. Nishihashi

Keyword(s):

Ion Implantation ◽

Technology Node ◽

Stencil Mask

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Rapid thermal annealing of arsenic implanted silicon wafers

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) ◽

10.1109/iwjt.2001.993829 ◽

2002 ◽

Author(s):

Woo Sik Yoo ◽

T. Fukada ◽

T. Setokubo ◽

K. Aizawa ◽

J. Yamamoto ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Silicon Wafers

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Ultra shallow junctions formed by different pulse duration excimer lasers

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) ◽

10.1109/iwjt.2001.993837 ◽

2002 ◽

Author(s):

K. Kagawa ◽

Y. Niwatsukino ◽

A. Matsuno ◽

T. Nire

Keyword(s):

Pulse Duration ◽

Excimer Lasers ◽

Shallow Junctions ◽

Ultra Shallow Junctions

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Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Rapid thermal processing using single wafer rapid thermal furnace

Improvement of dosimetry monitoring by Therma-Wave signal in indium implantation

Integration of ultra-shallow junctions in sub-0.1 μm CMOS transistors : what kind of process for a "safe" advanced technology?

Co-implantation of boron and fluorine in silicon

Reduction of threshold voltage fluctuation of p-MOSFETs by antimony super steep retrograde well channel

Combination of germanium preamorphization and sub-keV boron implantation for source/drain extension of pMOSFETs

Surface concentration of primary ion species and its effect to depth profiling in SIMS analyses

Stencil mask ion implantation technology for sub 100 nm technology node

Rapid thermal annealing of arsenic implanted silicon wafers

Ultra shallow junctions formed by different pulse duration excimer lasers

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Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Rapid thermal processing using single wafer rapid thermal furnace

Improvement of dosimetry monitoring by Therma-Wave signal in indium implantation

Integration of ultra-shallow junctions in sub-0.1 μm CMOS transistors : what kind of process for a "safe" advanced technology?

Co-implantation of boron and fluorine in silicon

Reduction of threshold voltage fluctuation of p-MOSFETs by antimony super steep retrograde well channel

Combination of germanium preamorphization and sub-keV boron implantation for source/drain extension of pMOSFETs

Surface concentration of primary ion species and its effect to depth profiling in SIMS analyses

Stencil mask ion implantation technology for sub 100 nm technology node

Rapid thermal annealing of arsenic implanted silicon wafers

Ultra shallow junctions formed by different pulse duration excimer lasers

Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C)
Latest Publications