Investigation on resistive switching characteristics of ZnO thin film

2014 ◽  
Author(s):  
Min Wei ◽  
Fan Yang ◽  
Chunfu Li ◽  
Hong Deng ◽  
Guangjun Wen
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Zno Thin Film ◽  
Switching Characteristics

scholarly journals Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

2012 ◽  
Vol 152 (17) ◽  
pp. 1630-1634 ◽  
Author(s):  
Feng Zhang ◽  
Xiaomin Li ◽  
Xiangdong Gao ◽  
Liang Wu ◽  
Fuwei Zhuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Defect Content ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Light-controlled resistive switching characteristics in ZnO/BiFeO3/ZnO thin film

2018 ◽  
Vol 145 ◽  
pp. 46-48 ◽  
Author(s):  
Dandan Liang ◽  
Xiaoping Li ◽  
Junshuai Wang ◽  
Liangchen Wu ◽  
Peng Chen
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Zno Thin Film ◽  
Switching Characteristics

Characteristics of ZnO Thin Film for the Resistive Random Access Memory

2010 ◽  
Vol 1250 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koseng Su Lim
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Zno Thin Film ◽  
Electrical Field ◽  
High Electrical Field ◽  
Oxygen Conditions ◽  
Switching Characteristics

AbstractWe report resistive switching characteristics in Pt/ZnO/Pt devices where ZnO thin film is fabricated at various oxygen conditions. With the increase of oxygen contents in ZnO thin film, the forming voltage is gradually increased while reset and set voltages are almost unchanged. We also investigated the effect of top electrodes on resistive switching of top electrode/ZnO/Pt device. For a Pt/ZnO/Pt device, it exhibits the excellent resistive switching behavior due to high electrical field of the well-defined Schottky barrier. For Al/ZnO/Pt device, little resistive switching phenomena were occurred due to leakage current of the weak Schottky (or Ohmic) contact.

Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

2011 ◽  
Vol 520 (4) ◽  
pp. 1246-1250 ◽  
Author(s):  
Kou-Chen Liu ◽  
Wen-Hsien Tzeng ◽  
Kow-Ming Chang ◽  
Jiun-Jie Huang ◽  
Yun-Ju Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Resistive Switching ◽  
Film Properties ◽  
Switching Characteristics

Influence of Bias-Induced Copper Diffusion on the Resistive Switching Characteristics of a SiON Thin Film

2011 ◽  
Vol 14 (2) ◽  
pp. H93 ◽  
Author(s):  
Po-Chun Yang ◽  
Ting-Chang Chang ◽  
Shih-Ching Chen ◽  
Yu-Shih Lin ◽  
Hui-Chun Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Copper Diffusion ◽  
Switching Characteristics

scholarly journals Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio

2013 ◽  
Vol 8 (1) ◽  
pp. 483 ◽  
Author(s):  
Hsin-Wei Huang ◽  
Chen-Fang Kang ◽  
Fang-I Lai ◽  
Jr-Hau He ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Oxygen Pressure ◽  
Pressure Ratio ◽  
Zno Thin Film ◽  
Resistive Switching Memory ◽  
Switching Memory
Sign in / Sign up

Export Citation Format

Share Document