Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

2007 ◽  
Author(s):  
Chennupati Jagadish
Keyword(s):  
Quantum Dots ◽  
Optoelectronic Device ◽  
Compound Semiconductor ◽  
Semiconductor Quantum Dots ◽  
Device Applications

InAs Quantum Dots for Optoelectronic Device Applications

2004 ◽  
Vol 829 ◽  
Author(s):  
K. Stewart ◽  
S. Barik ◽  
M. Buda ◽  
H. H. Tan ◽  
C. Jagadish
Keyword(s):  
Quantum Dots ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Organic Chemical ◽  
Group V ◽  
Inas Quantum Dots ◽  
Group Iii ◽  
Device Applications ◽  
Metal Organic

ABSTRACTIn this paper we discuss the growth of self-assembled InAs quantum dots (QDs) on both GaAs and InP substrates by low pressure Metal Organic Chemical Vapor Deposition. The influence of various growth parameters, such as the deposition time, the QD overlayer growth temperature, the V/III ratio and the group III and/or group V interdiffusion on QD formation are discussed and compared for the two systems. Stacking issues and preliminary results for an InAs/GaAs QD laser are also presented.

Effect of spectral overlap and mixing ratio on metal-semiconductor mixed colloid.

2021 ◽  
Author(s):  
Sabina Gurung ◽  
Asha Singh ◽  
J Jayabalan
Keyword(s):  
Optoelectronic Device ◽  
Semiconductor Quantum Dots ◽  
Advanced Materials ◽  
Mixing Ratio ◽  
Ag Nps ◽  
Time Resolved ◽  
Decay Component ◽  
Device Applications ◽  
Time Resolved Photoluminescence ◽  
Selection Of

Abstract Metal-semiconductor hybrid colloid is an emerging paradigm for construction of advanced materials having multiple functionalities. In such colloids, the ratio between the number of metal nanoparticles (NP) to the number of semiconductor quantum dots (QD) plays an important role in controlling the properties of the final hybrid colloid. We study the effect of mixing ratio of Ag NPs to the CdTe QDs on the photoluminscence (PL) properties of the final mixed hybrid colloid. Using steady-state and time-resolved photoluminescence, it has been shown that when exciton and plasmon spectrally overlap in a hybrid, the amplitude of the decay component of PL depends on the excitation energy. Such dependence is not observed in the case of hybrid where exciton and plasmon are spectrally separated. This study contributes to the appropriate selection of the shape of metal NPs in designing a hybrid material that is well suited for optoelectronic device applications.

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