The performance of an inspection system for indium tin oxide circuits by using a PDLC/ITO film

2013 ◽  
Author(s):  
C.-H. Chan ◽  
Y.-T. Zou ◽  
C.-T. Chen ◽  
T.-K. Liu ◽  
C.-H. Chen ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Inspection System ◽  
Ito Film

Characterization of indium tin oxide film and practical ITO film by electron microscopy

2000 ◽  
Vol 370 (1-2) ◽  
pp. 155-162 ◽  
Author(s):  
T. Nakao ◽  
T. Nakada ◽  
Y. Nakayama ◽  
K. Miyatani ◽  
Y. Kimura ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Oxide Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ito Film

The Mechanical Reliability of Sputter-Coated Indium Tin Oxide Polyester Substrates for Flexible Display and Touchscreen Applications

2001 ◽  
Vol 666 ◽  
Author(s):  
Darran R. Cairns ◽  
David C. Paine ◽  
Gregory P. Crawford
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Liquid Crystal Displays ◽  
Mechanical Reliability ◽  
Flexible Display ◽  
Ito Film ◽  
Polyethylene Terephthalate Substrate ◽  
Electrical Reliability ◽  
New Generation ◽  
Over Time

ABSTRACTIndium tin oxide (ITO) films deposited on polyester substrates are a key material in the development of two exciting technologies, touchscreens and flexible liquid crystal displays. The new generation “plastic” displays and touchscreens must be flexible and robust, have excellent optical properties, and be inexpensive. We report on the mechanical and electrical reliability of ITO on a polyethylene terephthalate substrate (PET). We show that the mechanical behavior of the ITO film is dominated by the properties of the substrate and that the deformation of the substrate is mapped by the crack patterns in the ITO. This is most strongly evidenced in the simulated wear of a touchscreen where failure after >50000 pen strokes is primarily due to cracking of the ITO as a result of increased substrate deformation over time. In addition the mechanical reliability of the ITO layer is dependent on the film thickness. Cracking was observed in a 105 nm thick ITO film at a strain of 0.022 and for a 16.8 nm thick film at 0.003. The thickness and hence sheet resistance of the film effectively limits the maximum allowable deformation of the substrate and must be considered in the design of suitable display and touchscreen devices. In addition we report on the change in resistance with time-at- temperature and relate this to the shrinkage of the substrate.

scholarly journals Optically Transparent Metasurface Absorber Based on Reconfigurable and Flexible Indium Tin Oxide Film

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1032
Author(s):  
Lei Chen ◽  
Ying Ruan ◽  
Si Si Luo ◽  
Fu Ju Ye ◽  
Hao Yang Cui
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Air Permeability ◽  
Ultra Wideband ◽  
Reflection Coefficients ◽  
Transmission And Reflection Coefficients ◽  
Ito Film ◽  
Optically Transparent ◽  
Transmission And Reflection ◽  
Good Agreement

In this paper, we present a flexible, breathable and optically transparent metasurface with ultra-wideband absorption. The designed double layer of indium tin oxide (ITO) films with specific carved structure realizes absorption and electromagnetic (EM) isolation in dual-polarization, as well as good air permeability. Under the illumination of x- and y-polarization incidence, the metasurface has low reflectivity and transmission from about 2 to 18 GHz. By employing ITO film based on polyethylene terephthalate (PET), the presented metasurface also processes the excellent flexibility and optically transparency, which can be utilized for wearable device application. In addition, the dual-layer design enables mechanically-reconfigurable property of the metasurface. The transmission and reflection coefficients in two polarizations show distinct difference when arranging the different relevant positions of two layers of the metasurface. A sample with 14*14 elements is designed, fabricated and measured, showing good agreement with the simulation results. We envision this work has various potentials in the wearable costume which demands both EM absorption and isolation.

scholarly journals Versatile Mode-Locked Operations in an Er-Doped Fiber Laser with a Film-Type Indium Tin Oxide Saturable Absorber

Nanomaterials ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 701 ◽  
Author(s):  
Quanxin Guo ◽  
Jie Pan ◽  
Dengwang Li ◽  
Yiming Shen ◽  
Xile Han ◽  
...  
Keyword(s):  
Fiber Laser ◽  
Saturable Absorber ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Dual Wavelength ◽  
Ito Film ◽  
Film Type ◽  
New Type ◽  
Ultrafast Photonics ◽  
Er Doped

We demonstrate the generation of versatile mode-locked operations in an Er-doped fiber laser with an indium tin oxide (ITO) saturable absorber (SA). As an epsilon-near-zero material, ITO has been only used to fashion a mode-locked fiber laser as an ITO nanoparticle-polyvinyl alcohol SA. However, this type of SA cannot work at high power or ensure that the SA materials can be transmitted by the light. Thus, we covered the end face of a fiber with a uniform ITO film using the radio frequency magnetron sputtering technology to fabricate a novel ITO SA. Using this new type of SA, single-wavelength pulses, dual-wavelength pulses, and triple-wavelength multi-pulses were achieved easily. The pulse durations of these mode-locked operations were 1.67, 6.91, and 1 ns, respectively. At the dual-wavelength mode-locked state, the fiber laser could achieve an output power of 2.91 mW and a pulse energy of 1.48 nJ. This study reveals that such a proposed film-type ITO SA has excellent nonlinear absorption properties, which can promote the application of ITO film for ultrafast photonics.

Study on the Panel Fabrication for the Field Emission Display with Symmetrical Electrode Stripe

2011 ◽  
Vol 142 ◽  
pp. 58-61
Author(s):  
Yan Xia Ma
Keyword(s):  
Field Emission ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Emission Characteristics ◽  
Plate Surface ◽  
Insulation Layer ◽  
Field Emission Display ◽  
Ito Film ◽  
Ito Electrode ◽  
Substrate Plate

Using carbon nanotubes as cold cathode material, the panel fabrication for the diode field emission display (FED) with symmetrical electrode stripe was studied. The indium tin oxide (ITO) film was used as conduction electrode on the substrate plate surface, and the precise photolithography method was adopted as the high effective fabrication process. For the both cathode and anode plate, the whole ITO film would be etched in the bar form, and the divided bar ITO stripe would be arranged symmetrically. On the cathode plate surface, the printed silver slurry was used to form the cathode extension lines and the cathode insulation layer was formed with the sintered insulation slurry. Whether for the cathode ITO electrodes or for the anode ITO electrodes, the length of bar ITO electrode become small, which would be beneficial for reducing the panel working-voltage. The FED panel was sealed and measured, which possessed good field emission characteristics.

Low Resistivity Transparent Indium Tin Oxide (Ito) Films Sputtered At Room Temperature With H2O Addition

1996 ◽  
Vol 424 ◽  
Author(s):  
Ken-Ichi Onisawa ◽  
Etsuko Nishimura ◽  
Masahiko Ando ◽  
Takeshi Satou ◽  
Masaru Takabatake* ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Dc Magnetron Sputtering ◽  
Low Resistivity ◽  
Ito Film ◽  
Good Pattern ◽  
Cluster Type ◽  
Argon Sputtering

AbstractA new kind of amorphous indium tin oxide (ITO) film with good pattern delineation properties and mass production capability, as well as low resistivity and high transparency has been developed. The film was prepared by a cluster-type DC magnetron sputtering apparatus at room temperature with H2O addition to the argon sputtering gas. The amorphous ITO film quality was improved by effective termination of oxygen vacancies with -OH species generated by enhanced decomposition from the added H2O in the plasma.

Indium Tin Oxide (ITO) Film Removal Technique for Failure Analysis on Packaged Optoelectronic Devices

2003 ◽  
Author(s):  
Shawn Elliott ◽  
Jean Gordon ◽  
Peter Plourde
Keyword(s):  
Failure Analysis ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Argon Gas ◽  
Electrical Failure ◽  
Glass Substrates ◽  
Ito Film ◽  
Conductive Film ◽  
Aluminum Metallization ◽  
Removal Technique

Abstract Various detector chips in optocoupler devices have a thin indium tin oxide (ITO) film deposited over the passivation. This transparent, conductive film is found over the photodetecting area of the die. When this film is electrically connected to ground potential through contacts, it acts as a shield to avoid inversion failures by sinking any charge buildup to ground. In order to perform a full electrical failure analysis on these optocoupler detector chips, the ITO layer must be removed. An extensive search found numerous papers on etching this film over glass substrates, but no known technique was found to selectively remove the ITO layer on a packaged die. This paper discusses an approach to remove this film using an argon gas etch technique. The ideal characteristics of any process used to remove this film on a finished die would be to completely etch the ITO layer, electrically isolating it from ground, while leaving the underlying passivation and metallization fully intact. This would allow for further electrical failure analysis of the die without causing additional damage or affecting the failure mechanism. The results of an experiment using various chemical and gas etchants found that an argon gas etch would remove the ITO layer while only slightly etching the phosphosilicate glass (PSG) passivation beneath. Electrical failure analysis of the die continued at this point, and a subsequent buffered oxide etch (BOE) removed the remaining passivation, leaving the exposed metallization and oxide completely intact. This technique has been used successfully on device failures to find passivation contamination shorting the aluminum metallization to the ITO film.

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