Ion-implanted Si:P blocked-impurity-band photodetectors for far-infrared and terahertz radiation detection

2013 ◽  
Author(s):  
Kaisheng Liao ◽  
Ning Li ◽  
Xihui Liu ◽  
Liang Huang ◽  
Qiaoyu Zeng ◽  
...  
Keyword(s):  
Terahertz Radiation ◽  
Radiation Detection ◽  
Far Infrared ◽  
Impurity Band ◽  
Ion Implanted

Extended mode in blocked impurity band detectors for terahertz radiation detection

2014 ◽  
Vol 105 (14) ◽  
pp. 143501 ◽  
Author(s):  
K. S. Liao ◽  
N. Li ◽  
C. Wang ◽  
L. Li ◽  
Y. L. Jing ◽  
...  
Keyword(s):  
Terahertz Radiation ◽  
Radiation Detection ◽  
Impurity Band ◽  
Blocked Impurity Band Detectors

Ion-implanted Ge:B far-infrared blocked-impurity-band detectors

2007 ◽  
Vol 51 (1) ◽  
pp. 60-65 ◽  
Author(s):  
Jeffrey W. Beeman ◽  
Supriya Goyal ◽  
Lothar A. Reichertz ◽  
Eugene E. Haller
Keyword(s):  
Far Infrared ◽  
Impurity Band ◽  
Blocked Impurity Band Detectors ◽  
Ion Implanted

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

scholarly journals Far-infrared blocked impurity band detector development

2007 ◽  
Author(s):  
H. H. Hogue ◽  
M. T. Guptill ◽  
J. C. Monson ◽  
J. W. Stewart ◽  
J. E. Huffman ◽  
...  
Keyword(s):  
Far Infrared ◽  
Impurity Band

scholarly journals Broadband terahertz radiation from two-color mid- and far-infrared laser filaments in air

2018 ◽  
Vol 97 (6) ◽  
Author(s):  
Alisée Nguyen ◽  
Pedro González de Alaiza Martínez ◽  
Illia Thiele ◽  
Stefan Skupin ◽  
Luc Bergé
Keyword(s):  
Terahertz Radiation ◽  
Far Infrared ◽  
Infrared Laser ◽  
Far Infrared Laser ◽  
Broadband Terahertz

Far-infrared absorption inCd1−xMnxSe: New impurity-band effects

1984 ◽  
Vol 30 (10) ◽  
pp. 6221-6223 ◽  
Author(s):  
V. J. Goldman ◽  
H. D. Drew
Keyword(s):  
Infrared Absorption ◽  
Far Infrared ◽  
Impurity Band
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