scholarly journals Far-infrared blocked impurity band detector development

2007 ◽  
Author(s):  
H. H. Hogue ◽  
M. T. Guptill ◽  
J. C. Monson ◽  
J. W. Stewart ◽  
J. E. Huffman ◽  
...  
Keyword(s):  
Far Infrared ◽  
Impurity Band

Far-infrared absorption inCd1−xMnxSe: New impurity-band effects

1984 ◽  
Vol 30 (10) ◽  
pp. 6221-6223 ◽  
Author(s):  
V. J. Goldman ◽  
H. D. Drew
Keyword(s):  
Infrared Absorption ◽  
Far Infrared ◽  
Impurity Band

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

Germanium blocked‐impurity‐band far‐infrared detectors

1988 ◽  
Vol 52 (19) ◽  
pp. 1602-1604 ◽  
Author(s):  
Dan M. Watson ◽  
James E. Huffman
Keyword(s):  
Infrared Detectors ◽  
Far Infrared ◽  
Impurity Band ◽  
Far Infrared Detectors

Far-Infrared Absorption Spectra of Impurity Band in n-Type Germanium

1979 ◽  
Vol 47 (1) ◽  
pp. 138-144 ◽  
Author(s):  
Michihiro Kobayashi ◽  
Yuuji Sakaida ◽  
Masaki Taniguchi ◽  
Shin-ichiro Narita
Keyword(s):  
Absorption Spectra ◽  
Infrared Absorption ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Absorption Spectra

Ion-Implanted Germanium Far-Infrared Photodetectors

1992 ◽  
Vol 261 ◽  
Author(s):  
I. C. Wua ◽  
E. E. Hailer
Keyword(s):  
Far Infrared ◽  
Impurity Band ◽  
High Energy ◽  
Device Performance ◽  
Cutoff Wavelength ◽  
Applied Bias ◽  
Potential Applications ◽  
Photo Response ◽  
Shallow Acceptors ◽  
Dark Currents

ABSTRACTGermanium Blocked Impurity-Band (BIB) detectors, which have potential applications for space-born far infrared astrophysics observations, have been fabricated by means of boron ion implantation on high-purity Ge substrates. These devices are sensitive beyond the cutoff wavelength of Ge photoconductors doped with shallow acceptors. The extended cutoff wavelength increases with applied bias and can reach up to 200μm at very low dark currents of less than 100 electrons/sec. In order to enhance the photo-response, high-energy (3MeV) implantation has been used to form a thicker infrared-active layer. The influence of both ion-implant energies and post-implant anneals on the performance of detectors will be presented. Generation of excess donors in the boron implanted region has been observed. Their origin and effect of device performance will be discussed.

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