Transmission line pulse system for avalanche characterization of high power semiconductor devices

Mapping Intimacies ◽

10.1117/12.2017319 ◽

2013 ◽

Author(s):

Michele Riccio ◽

Giovanni Ascione ◽

Giuseppe De Falco ◽

Luca Maresca ◽

Martina De Laurentis ◽

...

Keyword(s):

Transmission Line ◽

High Power ◽

Semiconductor Devices ◽

Pulse System ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Co-axial current transformer for test and characterization of high power semiconductor devices under hard and soft-switching

Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370) ◽

10.1109/ias.1999.806013 ◽

2003 ◽

Author(s):

R.O.C. Lyra ◽

V. John ◽

T.A. Lipo ◽

B.J.C. Filho

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Current Transformer ◽

Axial Current ◽

Soft Switching ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Coaxial current transformer for test and characterization of high-power semiconductor devices under hard and soft switching

IEEE Transactions on Industry Applications ◽

10.1109/28.855977 ◽

2000 ◽

Vol 36 (4) ◽

pp. 1181-1188 ◽

Cited By ~ 12

Author(s):

R.O.C. Lyra ◽

B.J. Cardoso Filho ◽

V. John ◽

T.A. Lipo

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Current Transformer ◽

Soft Switching ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Process optimization and characterization of a novel micro-scaled silver sintering paste as a die-attach material for high temperature high power semiconductor devices

Proceedings of the 36th International Spring Seminar on Electronics Technology ◽

10.1109/isse.2013.6648214 ◽

2013 ◽

Cited By ~ 8

Author(s):

Adeel A. Bajwa ◽

R. Zeiser ◽

J. Wilde

Keyword(s):

High Temperature ◽

Process Optimization ◽

High Power ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Die Attach ◽

Silver Sintering

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Room Temperature Bonding of GaN on Diamond Wafers by Using Mo/Au Nano-Layer for High-Power Semiconductor Devices

SSRN Electronic Journal ◽

10.2139/ssrn.3427489 ◽

2019 ◽

Author(s):

Kang Wang ◽

Kun Ruan ◽

Wenbo Hu ◽

Shengli Wu ◽

Hongxing Wang

Keyword(s):

High Power ◽

Room Temperature ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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System-In-Package Approach for Ultra-High-Power Semiconductor Devices

2006 International Conference on Electronic Materials and Packaging ◽

10.1109/emap.2006.4430564 ◽

2006 ◽

Author(s):

Jeffrey Chen

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Low Temperature Bonding Polycrystalline Diamond to Si by Using Au Thin-layer for High-power Semiconductor Devices

10.1109/icept52650.2021.9568004 ◽

2021 ◽

Author(s):

Yi Zhong ◽

Shuchao Bao ◽

Ke Li ◽

Mingchuan Zhang ◽

Daquan Yu

Keyword(s):

Low Temperature ◽

Thin Layer ◽

High Power ◽

Semiconductor Devices ◽

Polycrystalline Diamond ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Low Temperature Bonding

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(Invited) High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials

ECS Transactions ◽

10.1149/1.3631482 ◽

2019 ◽

Vol 41 (8) ◽

pp. 19-30 ◽

Cited By ~ 1

Author(s):

Matthew J. Marinella ◽

Stanley Atcitty ◽

Sandeepan DasGupta ◽

Robert J. Kaplar ◽

Mark A. Smith

Keyword(s):

High Power ◽

State Of The Art ◽

Semiconductor Devices ◽

Advanced Materials ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Current State

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Simulation of the Transient Temperature Distribution in a Cooling Apparatus for High-Power Semiconductor Devices Using Heat Pipes.

TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series B ◽

10.1299/kikaib.62.1172 ◽

1996 ◽

Vol 62 (595) ◽

pp. 1172-1177

Author(s):

Osamu SUZUKI ◽

Kazumasa FUJIOKA ◽

Heikichi KUWAHARA ◽

Toshio TAKASAKI

Keyword(s):

Temperature Distribution ◽

High Power ◽

Semiconductor Devices ◽

Heat Pipes ◽

Transient Temperature ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Transient Temperature Distribution

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Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H)

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) ◽

10.1109/ispsd.1998.702664 ◽

2002 ◽

Cited By ~ 3

Author(s):

R. Barthelmess ◽

M. Beuermann ◽

D. Metzner ◽

G. Schmidt ◽

D. Westerholt ◽

...

Keyword(s):

Amorphous Carbon ◽

High Power ◽

Semiconductor Devices ◽

Hydrogenated Amorphous Carbon ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Hydrogenated Amorphous

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High-power semiconductor devices. Review and comparative assessment

Russian Electrical Engineering ◽

10.3103/s106837120710001x ◽

2007 ◽

Vol 78 (10) ◽

pp. 509-514 ◽

Cited By ~ 3

Author(s):

S. Linder

Keyword(s):

High Power ◽

Semiconductor Devices ◽

Comparative Assessment ◽

Power Semiconductor ◽

Power Semiconductor Devices

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