Collector optic in-situ Sn removal using hydrogen plasma

2013 ◽  
Author(s):  
John R. Sporre ◽  
Dan Elg ◽  
David N. Ruzic ◽  
Shailendra N. Srivastava ◽  
Igor V. Fomenkov ◽  
...  
Keyword(s):  
Hydrogen Plasma

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance

In Situ Auger Spectroscopy Investigation of InP Surfaces Treated in RF Hydrogen and Hydrogen/Methane/Argon Plasmas

1995 ◽  
Vol 386 ◽  
Author(s):  
J. E. Parmeter ◽  
R. J. Shul ◽  
P. A. Miller
Keyword(s):  
Hydrogen Plasma ◽  
Auger Spectroscopy ◽  
Surface Roughening ◽  
Rf Power ◽  
Plasma Exposure ◽  
Argon Plasmas ◽  
Etch Rates ◽  
Phosphorus Depletion ◽  
Oxygen Impurities

ABSTRACTWe have used in situ Auger spectroscopic analysis to investigate the composition of InP surfaces cleaned in rf H2 plasmas and etched in rf H2/CH4/Ar plasmas. In general agreement with previous results, hydrogen plasma treatment is found to remove surface carbon and oxygen impurities but also leads to substantial surface phosphorus depletion if not carefully controlled. Low plasma exposure times and rf power settings minimize both phosphorus depletion and surface roughening. Surfaces etched in H2/CH4/Ar plasmas can show severe phosphorus depletion in high density plasmas leading to etch rates of ∼ 700 Å/min, but this effect is greatly reduced in lower density plasmas that produce etch rates of 30–400 Å/min.

Hydrogen-plasma etching of ion beam deposited c-BN films: An in situ investigation of the surface with electron spectroscopy

2000 ◽  
Vol 88 (10) ◽  
pp. 5597-5604 ◽  
Author(s):  
P. Reinke ◽  
P. Oelhafen ◽  
H. Feldermann ◽  
C. Ronning ◽  
H. Hofsäss
Keyword(s):  
Plasma Etching ◽  
Electron Spectroscopy ◽  
Ion Beam ◽  
Hydrogen Plasma ◽  
In Situ Investigation

In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications

2020 ◽  
Vol 12 (14) ◽  
pp. 16639-16647 ◽  
Author(s):  
Alexander C. Kozen ◽  
Zachary R. Robinson ◽  
Evan R. Glaser ◽  
Mark Twigg ◽  
Thomas J. Larrabee ◽  
...  
Keyword(s):  
Niobium Oxide ◽  
Hydrogen Plasma ◽  
Oxide Films ◽  
Atomic Layer ◽  
Plasma Exposure ◽  
Neuromorphic Computing

Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth

2005 ◽  
Vol 475-479 ◽  
pp. 4067-4070
Author(s):  
Hyoun Woo Kim
Keyword(s):  
Electron Cyclotron Resonance ◽  
Substrate Surface ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Silicon Substrates ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Defective Layer ◽  
Interfacial Oxygen

We have demonstrated the preparation of the almost defect-free homoepitaxial layer and the defective layer, respectively, with and without applying the in-situ cleaning of the silicon substrate surface using electron cyclotron resonance hydrogen plasma. Secondary ion mass spectroscopy indicated that the interfacial oxygen and carbon concentrations, respectively, decreased and increased with the in-situ cleaning. We have investigated the effect of process parameters such as microwave power, d.c bias, and cleaning time, on the epitaxial growth, by evaluating the cross-sectional transmission electron microscopy images of the subsequently deposited Si homoepitaxial film.

Microcrystalline Silicon Growth: Deposition Rate Limiting Factors

1998 ◽  
Vol 507 ◽  
Author(s):  
S. Hamma ◽  
D. Colliquet ◽  
P. Rocai Cabarrocas
Keyword(s):  
Deposition Rate ◽  
Hydrogen Plasma ◽  
Limiting Factors ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Glass Substrates ◽  
Hydrogen Dilution ◽  
Corning Glass ◽  
Silicon Growth

ABSTRACTMicrocrystalline silicon films were deposited on corning glass substrates both by the standard hydrogen dilution and the layer-by-layer (LBL) technique. In-situ UV-visible spectroscopic ellipsometry measurements were performed to analyze the evolution of the composition of the films.The change of the hydrogen plasma conditions by increasing the pressure in the LBL process leads to a faster kinetic of crystallization and to an increase of the deposition rate by a factor of two. The increase of the pressure and the decrease of the inter-electrode distance allowed to increase the deposition rate from 0.26 to 3 Å/s in the hydrogen dilution technique. Interestingly enough, the crystalline fraction of the films remains higher than 50%. However, as the deposition rate increases the growth process results in a slower kinetic of crystallization with a long range evolution of the film composition (up to 0.5 νm).

Passivation of III-V Semiconductor Surfaces Using Light Assisted Integrated Processes

1994 ◽  
Vol 342 ◽  
Author(s):  
Olivier Dulac ◽  
Yves I. Nissim
Keyword(s):  
Field Effect ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Film Deposition ◽  
Gaas Surface ◽  
Nitride Film ◽  
Semiconductor Surfaces ◽  
Silicon Nitride Film

ABSTRACTPassivation of III-V semiconductor surfaces and especially the GaAs surface has been studied for over two decades without significant breakthrough. However, III-V device performances are still often limited by surface properties. In particular field effect behaviour in GaAs has been impossible to obtain due to the Fermi level pinning at the surface of this material. This paper presents an integrated sequence of low thermal budget processes to provide contamination control at the GaAs surface leading to very promising field effect on GaAs.In-situ surface cleaning using a Distributed Electron Cyclotron Resonance Microwave plasma (DECR MMP) has been integrated with a thin dielectric film deposition facility using light assisted CVD technics. Photoluminescence results carried out on GaAs surfaces have demonstrated that exposure to a hydrogen plasma induces lower recombination rates on these surfaces. Bulk diffusion of hydrogen during this process can be controlled and eliminated using an integrated Rapid Thermal Annealing (RTA). Finally, in-situ encapsulation by a dielectric allows one to stabilize the electronic properties of the surface for passivation applications. A silicon nitride film deposited by a direct UV photolysis deposition process has been developed for this study and is presented here.

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