Aqueous base developable novel deep-UV resist for KrF excimer laser lithography

1990 ◽  
Author(s):  
Makoto Murata ◽  
Toshihiko Takahashi ◽  
Mitsunobu Koshiba ◽  
Shin-ichi Kawamura ◽  
Tsuguo Yamaoka
Keyword(s):  
Excimer Laser ◽  
Laser Lithography ◽  
Aqueous Base ◽  
Deep Uv ◽  
Krf Excimer Laser

scholarly journals An aqueous base developable novel deep-UV resist for KrF excimer laser lithography.

1991 ◽  
Vol 4 (3) ◽  
pp. 509-516 ◽  
Author(s):  
Makoto Murata ◽  
Eiichi Kobayashi ◽  
Yoshiji Yumoto ◽  
Takao Miura ◽  
Tsuguo Yamaoka
Keyword(s):  
Excimer Laser ◽  
Laser Lithography ◽  
Aqueous Base ◽  
Deep Uv ◽  
Krf Excimer Laser

scholarly journals o-Nitrobenzyl Ester Based Deep UV Resist for KrF Excimer Laser Lithography

1989 ◽  
Vol 21 (8) ◽  
pp. 603-607 ◽  
Author(s):  
Masayuki Endo ◽  
Yoshiyuki Tani ◽  
Masaru Sasago ◽  
Noboru Nomura
Keyword(s):  
Excimer Laser ◽  
Laser Lithography ◽  
Deep Uv ◽  
Krf Excimer Laser

Novel positive deep UV resist for KrF excimer laser lithography

1989 ◽  
Vol 29 (13) ◽  
pp. 859-862 ◽  
Author(s):  
Masayuki Endo ◽  
Yoshiyuki Tani ◽  
Masaru Sasago ◽  
Kazufumi Ogawa ◽  
Noboru Nomura
Keyword(s):  
Excimer Laser ◽  
Laser Lithography ◽  
Deep Uv ◽  
Krf Excimer Laser

New Negative Deep-UV Resist for KrF Excimer Laser Lithography

1989 ◽  
pp. 269-279
Author(s):  
Masayuki Endo ◽  
Yoshiyuki Tani ◽  
Masaru Sasago ◽  
Noboru Nomura
Keyword(s):  
Excimer Laser ◽  
Laser Lithography ◽  
Deep Uv ◽  
Krf Excimer Laser

Azide‐Styrene Resin Negative Deep UV Resist for KrF Excimer Laser Lithography

1989 ◽  
Vol 136 (9) ◽  
pp. 2615-2618 ◽  
Author(s):  
Masayuki Endo ◽  
Yoshiyuki Tani ◽  
Masaru Sasago ◽  
Noboru Nomura
Keyword(s):  
Excimer Laser ◽  
Laser Lithography ◽  
Deep Uv ◽  
Krf Excimer Laser

An Alkaline-Developable Positive Resist Based on Silylated Polyhydroxystyrene for KrF Excimer Laser Lithography

1993 ◽  
pp. 88-100
Author(s):  
Eiichi Kobayashi ◽  
Makoto Murata ◽  
Mikio Yamachika ◽  
Yasutaka Kobayashi ◽  
Yoshiji Yumoto ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Lithography ◽  
Krf Excimer Laser ◽  
Positive Resist

Recent Progress in Excimer Laser Lithography

1987 ◽  
Vol 101 ◽  
Author(s):  
I. Higashikawa ◽  
M. Nonaka ◽  
T. Sato ◽  
M. Nakase ◽  
S. Ito ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Diffraction Method ◽  
Pulse Frequency ◽  
Field Size ◽  
Laser Exposure ◽  
Projection Lens ◽  
Laser Lithography ◽  
Alignment System ◽  
Space Pattern ◽  
Krf Excimer Laser

ABSTRACTA KrF excimer laser exposure method has been developed for laboratory use, which employs 10 to 1 achromatic projection lens of 0.37 NA and 5x5 mm field size , and a TTL alignment system using the double diffraction method, which was realized by the use,of the achromatic lens. Novolak type mid-UV resists, such as AZ-5214 and PR-1024, were best suited for use in 248 nm exposure, considering the sensitivity and etching resistance from a practical viewpoint, and an additional post exposure baking process also improved the resist profile. The dependences of the exposure characteristics on the energy density per pulse and pulse frequency of these resists were not observed in the region of the practical exposure conditions. An alignment precision of x±30-= 0.2 μm was achieved for the alignment mark consisting of poly Si pattern. Thus, a 0.3 μm line and space pattern was realized by using tri-level resist process and a 0.2 μm gate pattern was successfully fabricated on the coplanar pattern with a 0.4 μm step.

The Applicability of Fluorinated Silicon Nitride Film As Bottom Antireflective Layer In Deep Ultraviolet Lithography

1996 ◽  
Vol 446 ◽  
Author(s):  
Jun Byung-Hyuk ◽  
Han Sang-Soo ◽  
Kim Dong-Wan ◽  
Kang Ho-Young ◽  
Koh Young-Bum ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Ultraviolet Lithography ◽  
Si Substrates ◽  
Laser Lithography ◽  
Krf Excimer Laser

AbstractThis study describes the use of fluorinated silicon nitride film as a bottom antireflective layer (BARL) material suitable for line-patterning in quarter-micron KrF excimer laser lithography. For the structures of photoresist/BARL (300Å)/c-Si and photoresist/BARL (300 Å )/W-Si at a wavelength of 248nm, 0% reflectance could be achieved when the refractive index (n) and extinction coefficient (k) values of the film are 2.11 and 0.68 or 2.05 and 0.59, respectively. The fluorinated silicon nitride thin films on p-type (100) Si substrates obtained by inductively coupled plasma enhanced CVD have been evaluated with the variations of NF3 flow rates under the two conditions of SiH4:N2=2:15 and 3:20 (seem). The films optical constants and reflectance were investigated by spectroscopic ellipsometry combined with a reflectance simulation program. The film n and k values at 248nm vary in the ranges of 1.67~2.35 and 0.01~0.69, respectively, depending on gas flow ratio of SiH4:N2:NF3. Low reflectance of below 5% can be obtained from reflectance simulation for two deposition conditions with a BARL thickness of 300Å. In addition, the reflectance could be reduced to almost 0% by controlling film thickness. Finally, the antireflective layer performance was investigated using KrF excimer laser lithography.

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