Drift-diffusion modeling of InP-based triple junction solar cells

Author(s):  
M. P. Lumb ◽  
M. González ◽  
C. G. Bailey ◽  
I. Vurgaftman ◽  
J. R. Meyer ◽  
...  
Author(s):  
Matthew P. Lumb ◽  
Christopher G. Bailey ◽  
Jessica G. J. Adams ◽  
Glen Hillier ◽  
Francis Tuminello ◽  
...  

AIP Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 035026 ◽  
Author(s):  
Timofey Golubev ◽  
Dianyi Liu ◽  
Richard Lunt ◽  
Phillip Duxbury

2010 ◽  
Author(s):  
Balaji Padmanabhan ◽  
Ashwin Ashok ◽  
Dragica Vasileska ◽  
Y.-H. Zhang ◽  
Marília Caldas ◽  
...  

2000 ◽  
Author(s):  
D. Lillington ◽  
H. Cotal ◽  
J. Ermer ◽  
D. Friedman ◽  
T. Moriarty ◽  
...  
Keyword(s):  

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.


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