Variable angle spectroscopic ellipsometry for deep UV characterization of dielectric coatings

1994 ◽  
Author(s):  
Alexander Zuber ◽  
Norbert Kaiser ◽  
Jean-Louis P. Stehle
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Dielectric Coatings ◽  
Variable Angle ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Deep Uv

Characterization of polycrystalline AlN films using variable-angle spectroscopic ellipsometry

2005 ◽  
Vol 23 (4) ◽  
pp. 1284-1289 ◽  
Author(s):  
Li-Peng Wang ◽  
Dong S. Shim ◽  
Qing Ma ◽  
Valluri R. Rao ◽  
Eyal Ginsburg ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Variable Angle ◽  
Variable Angle Spectroscopic Ellipsometry

Characterization of Interfacial Layer of DUV Coatings by Spectroscopic Ellipsometry

2013 ◽  
Vol 662 ◽  
pp. 277-283
Author(s):  
Wen Yuan Deng
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Interfacial Layer ◽  
Single Layer ◽  
Double Layers ◽  
Optical Index ◽  
Variable Angle ◽  
Layer Sample ◽  
Deep Ultraviolet ◽  
Variable Angle Spectroscopic Ellipsometry

The Interfacial layer has an important influence on the optical performance of the deep ultraviolet (DUV) coatings. The variable angle Spectroscopic ellipsometry measurements of three kinds of DUV coating samples were performed in the wavelength range 150-500nm using a purged variable angle Spectroscopic ellipsometer. The samples include the single layer sample, double layers sample, and three layers sample. The thickness and optical index of the MgF2 layer and LaF3 layer as well as those of the interfacial layer between them were obtained by successful regression of the SE measurements. For the single layer, the agreement of the results between the SE and the spectrophotometic techniques was very good. The obtained thickness of the two kinds of interfacial layer was in consistent with the RMS results of the single layer obtained by AFM, indicating the obtained results were reliable.

scholarly journals Characterization of porous low-k films using variable angle spectroscopic ellipsometry

2006 ◽  
Vol 99 (8) ◽  
pp. 083503 ◽  
Author(s):  
M. T. Othman ◽  
J. A. Lubguban ◽  
A. A. Lubguban ◽  
S. Gangopadhyay ◽  
R. D. Miller ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Variable Angle ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Low K

Characterization of Polysilicon Thin Films by Variable Angle Spectroscopic Ellipsometry

1990 ◽  
Vol 182 ◽  
Author(s):  
Yi-Ming Xiong ◽  
Paul G. Snyder ◽  
John A. Woollam ◽  
Eric R. Krosche ◽  
Yale Strausser
Keyword(s):  
Electron Microscopy ◽  
Spectroscopic Ellipsometry ◽  
Multilayer Structures ◽  
Cross Sectional ◽  
Variable Angle ◽  
Transmission Electron ◽  
Polysilicon Layer ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Thickness Measurements

AbstractVariable angle spectroscopic ellipsometry was used to characterize polysilicon multilayer structures. Five different multilayer wafers, each containing a polysilicon layer, were studied. Layer thicknesses and compositions were determined at several locations across each wafer. The thickness measurements obtained by ellipsometry are compared with those determined from cross-sectional transmission electron microscopy (XTEM).

Characterization of an Asymmetric Triangular Multiple Quantum Well, by Variable Angle Spectroscopic Ellipsometry

1989 ◽  
Vol 160 ◽  
Author(s):  
Craig M. Herzinger ◽  
Paul G. Snyder ◽  
John A. Woollam ◽  
Keith Evans ◽  
C.E. Stutz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Multiple Quantum Well ◽  
Gaas Layer ◽  
Multiple Quantum ◽  
Bulk Gaas ◽  
Variable Angle ◽  
Variable Angle Spectroscopic Ellipsometry

AbstractVariable angle spectroscopic ellipsometry (VASE) was used to characterize a 20 period GaAs/Al(x)Ga(1-x)As multiple quantum well structure, grown by molecular beam epitaxy. The barriers were nominally 200 Å Al(.25)Ga(.75)As, and the well regions were grown to approximate a linearly graded composition, from x=0 to x=0.25, with total well width 200 Å. VASE data in the E1, E1,+Δ1. region were analyzed using four different models. It was founcЃ that the dielectric function of the cap GaAs layer was shifted to higher energy with respect to the bulk GaAs dielectric function.

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