Precise measurement of ARC optical indices in the deep-UV range by variable-angle spectroscopic ellipsometry

1997 ◽  
Author(s):  
Pierre Boher ◽  
Jean-Louis P. Stehle ◽  
Jean-Philippe Piel ◽  
Christophe Defranoux ◽  
Louis Hennet
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Precise Measurement ◽  
Variable Angle ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Deep Uv ◽  
Uv Range

scholarly journals Thin‐film hermeticity: A quantitative analysis of diamondlike carbon using variable angle spectroscopic ellipsometry

1988 ◽  
Vol 64 (8) ◽  
pp. 4175-4180 ◽  
Author(s):  
S. Orzeszko ◽  
Bhola N. De ◽  
John A. Woollam ◽  
John J. Pouch ◽  
Samuel A. Alterovitz ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantitative Analysis ◽  
Spectroscopic Ellipsometry ◽  
Variable Angle ◽  
Diamondlike Carbon ◽  
Variable Angle Spectroscopic Ellipsometry

In-line Characterization of Thin Polysilicon Films by Variable Angle Spectroscopic Ellipsometry

2000 ◽  
Vol 609 ◽  
Author(s):  
S. Paprotta ◽  
K. S. Röver ◽  
R. Ferretti ◽  
U. Höhne ◽  
J. D. Kähler ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Complex Refractive Index ◽  
Deposition Process ◽  
Oxide Thickness ◽  
Interface Layer ◽  
Parameter Determination ◽  
Variable Angle ◽  
Air Interface ◽  
Polysilicon Films ◽  
Variable Angle Spectroscopic Ellipsometry

ABSTRACTUp to now an in-line method for parameter determination of deposited thin polysilicon films is not available. In this paper a method for monitoring the polysilicon deposition process in device manufacturing by variable angle spectroscopic ellipsometry (VASE) is demonstrated. Therefore several polysilicon films are deposited on thermally oxidized [100] silicon wafers. These samples are characterized by VASE in the optical range of 450 - 850 nm. Parameters are determined by simulation using a multilayer model consisting of air, interface layer (surface roughness), polysilicon, SiO2 and silicon substrate. Different optical models representing the properties of polysilicon are tested. The free parameters are the oxide thickness, the composition and the thickness of the interface layer (air, polysilicon) as well as the thickness and the complex refractive index of the polysilicon layer. Results of the spectroscopic analysis are verified by AFM and SEM measurements. It can be shown that parameters of the deposited polysilicon films, which often could only be determined by complex and destructive off-line analysis methods are also accessible by non-destructive in-line VASE measurements.

Ordinary optical dielectric functions of anisotropic hexagonal GaN film determined by variable angle spectroscopic ellipsometry

2000 ◽  
Vol 88 (6) ◽  
pp. 3463-3469 ◽  
Author(s):  
C. H. Yan ◽  
H. Yao ◽  
J. M. Van Hove ◽  
A. M. Wowchak ◽  
P. P. Chow ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Variable Angle ◽  
Optical Dielectric ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Gan Film
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