Fundamental transverse mode 100-mW semiconductor laser with high reliability

Author(s):  
Takao Yamaguchi ◽  
Keiichi Yodoshi ◽  
Kimihide Minakuchi ◽  
Yasuaki Inoue ◽  
Koji Komeda ◽  
...  
1992 ◽  
Author(s):  
Keiichi Yodoshi ◽  
Norio Tabuchi ◽  
Atsushi Tajiri ◽  
Kimihide Minakuchi ◽  
Yasuyuki Bessho ◽  
...  

2017 ◽  
Vol 66 (8) ◽  
pp. 084205
Author(s):  
Liu Chu ◽  
Guan Bao-Lu ◽  
Mi Guo-Xin ◽  
Liao Yi-Ru ◽  
Liu Zhen-Yang ◽  
...  

2021 ◽  
Vol 9 ◽  
Author(s):  
Yixiong Yan ◽  
Yu Zheng ◽  
Haigang Sun ◽  
Ji’an Duan

In the past 20 years, semiconductor lasers have been widely used in medical, industrial, and communication applications, providing a revolutionary and powerful platform for the fifth generation and advanced manufacturing. Semiconductor laser has the advantages of small size, lightweight, high reliability and easy modulation, becoming increasingly popular. However, due to the laser diode emission mechanism limitation, the beam quality is inferior and cannot be directly applied and required to be handled by beam shaping. However, the packaging of multiple beam shaping optical components is accompanied by risks due to misalignment. The misalignment error of the optical components has a great hidden danger to the laser performance. As semiconductor lasers' power gradually increases, lasers' thermal management technology is also increasingly strict. Therefore, this article first reviews the beam shaping technology of semiconductor laser diode array. Secondly, the analysis of the influence of the array semiconductor laser optical device's misalignment is reviewed, and a feasible solution is proposed. Finally, it summarizes the researches on thermal management in high-power semiconductor lasers. This article aims to give readers a comprehensive and broad understanding of semiconductor laser packaging's technical difficulties and to recognize each corresponding solution.


2021 ◽  
Author(s):  
Tatsuhiro Hirose ◽  
Takahiro Numai

Abstract This paper reports on improvement of stability of the fundamental horizontal transverse mode in a ridge-type semiconductor laser by incorporating transversal diffraction gratings. Kinks do not appear in current versus light-output curves by appropriately designing the number of the grating periods when the mesa width is 5 μm in which kinks exist in current versus light-output curves for conventional ridge-type semiconductor lasers.


2003 ◽  
Vol 15 (7) ◽  
pp. 894-896 ◽  
Author(s):  
J.E. Hastie ◽  
J.-M. Hopkins ◽  
S. Calvez ◽  
Chan Wook Jeon ◽  
D. Burns ◽  
...  

2019 ◽  
Vol 25 (6) ◽  
pp. 1-9 ◽  
Author(s):  
Yong Zhao ◽  
Yuechun Shi ◽  
Pan Dai ◽  
Rulei Xiao ◽  
Shengping Liu ◽  
...  

1992 ◽  
Vol 28 (6) ◽  
pp. 523 ◽  
Author(s):  
N. Tabuchi ◽  
A. Tajiri ◽  
K. Minakuchi ◽  
K. Yodoshi ◽  
T. Yamaguchi

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