A new high‐power, narrow‐beam transverse‐mode stabilized semiconductor laser at 1.5 μm: the heteroepitaxial ridge‐overgrown laser

1984 ◽  
Vol 45 (10) ◽  
pp. 1025-1027 ◽  
Author(s):  
W. T. Tsang ◽  
R. A. Logan
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Transverse Mode ◽  
Narrow Beam

High-power operation of a transverse-mode stabilised AlGaInp visible light (λL = 683 nm) semiconductor laser

1987 ◽  
Vol 23 (18) ◽  
pp. 938 ◽  
Author(s):  
H. Fujii ◽  
K. Kobayashi ◽  
S. Kawata ◽  
A. Gomyo ◽  
I. Hino ◽  
...  
Keyword(s):  
Visible Light ◽  
Semiconductor Laser ◽  
High Power ◽  
Transverse Mode ◽  
High Power Operation ◽  
Power Operation

Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

2020 ◽  
Vol 41 (9) ◽  
pp. 1158-1164
Author(s):  
Bo LI ◽  
◽  
Zhen-fu WANG ◽  
Bo-cang QIU ◽  
Guo-wen YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
Semiconductor Laser ◽  
High Power ◽  
Temperature Characteristic ◽  
Laser Array ◽  
Power Semiconductor

High power neodymium-doped single transverse mode fibre laser

1993 ◽  
Vol 29 (17) ◽  
pp. 1500 ◽  
Author(s):  
H. Po ◽  
J.D. Cao ◽  
B.M. Laliberte ◽  
R.A. Minns ◽  
R.F. Robinson ◽  
...  
Keyword(s):  
High Power ◽  
Transverse Mode ◽  
Fibre Laser ◽  
Mode Fibre

High-power operation of 630 nm-band transverse-mode stabilised AlGaInP laser diodes with current-blocking region near facets

1991 ◽  
Vol 27 (8) ◽  
pp. 661 ◽  
Author(s):  
H. Hamada ◽  
M. Shono ◽  
S. Honda ◽  
R. Hiroyama ◽  
K. Matsukawa ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Power Operation ◽  
Power Operation ◽  
Current Blocking
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