Narrow spectral linewidth 150mW semiconductor laser with fundamental transverse mode for SHG light source

1992 ◽  
Vol 28 (6) ◽  
pp. 523 ◽  
Author(s):  
N. Tabuchi ◽  
A. Tajiri ◽  
K. Minakuchi ◽  
K. Yodoshi ◽  
T. Yamaguchi
1992 ◽  
Author(s):  
Keiichi Yodoshi ◽  
Norio Tabuchi ◽  
Atsushi Tajiri ◽  
Kimihide Minakuchi ◽  
Yasuyuki Bessho ◽  
...  

2021 ◽  
Vol 2057 (1) ◽  
pp. 012091
Author(s):  
D V Kulikov ◽  
S V Dvoynishnikov ◽  
V V Rahmanov ◽  
V A Pavlov ◽  
I K Kabardin

Abstract Current work is devoted to the development of a device for monitoring the dynamic shape of a power unit. The work is based on the FMCW method. The light source uses a low-coherence semiconductor laser diode. Signal processing is performed on an adapted Doppler processor. The paper describes the methods, hardware and signal processing algorithms.


2017 ◽  
Vol 66 (8) ◽  
pp. 084205
Author(s):  
Liu Chu ◽  
Guan Bao-Lu ◽  
Mi Guo-Xin ◽  
Liao Yi-Ru ◽  
Liu Zhen-Yang ◽  
...  

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 1260-1264 ◽  
Author(s):  
Weimin Si ◽  
Yi Luo ◽  
Dejie Li ◽  
Keqian Zhang ◽  
Yoshiaki Nakano ◽  
...  

2021 ◽  
Author(s):  
Tatsuhiro Hirose ◽  
Takahiro Numai

Abstract This paper reports on improvement of stability of the fundamental horizontal transverse mode in a ridge-type semiconductor laser by incorporating transversal diffraction gratings. Kinks do not appear in current versus light-output curves by appropriately designing the number of the grating periods when the mesa width is 5 μm in which kinks exist in current versus light-output curves for conventional ridge-type semiconductor lasers.


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