Passive millimeter-wave technique for diagnostics of the deep oceanic processes and underwater objects

1994 ◽  
Author(s):  
Igor V. Cherny ◽  
Grigorii M. Chernyavskiy
Keyword(s):  
Millimeter Wave ◽  
Wave Technique

A swept millimeter-wave technique for the detection of concealed weapons and thin layers of dielectric material with or without fragmentation

2009 ◽  
Author(s):  
David A. Andrews ◽  
Sarah Smith ◽  
Nacer Rezgui ◽  
Nicholas Bowring ◽  
Matthew Southgate ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Dielectric Material ◽  
Thin Layers ◽  
Concealed Weapons ◽  
Wave Technique

Subsurface Damage Profile Characterization of Si Wafers with Uv/Millimeter-Wave Technique and Light Scattering Topography

2000 ◽  
Vol 631 ◽  
Author(s):  
Takeo Katoh ◽  
Hideyuki Kondo ◽  
Yoh-Ichiro Ogita ◽  
Ken-Ichi Kobayashi ◽  
Masaki Kurokawa
Keyword(s):  
Light Scattering ◽  
Millimeter Wave ◽  
Silicon Crystal ◽  
Subsurface Damage ◽  
Hydrogen Ion ◽  
Clear Correlation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wave Technique

ABSTRACTWe have characterized subsurface damage profiles of hydrogen-ion implanted silicon wafers by using a non-contact UV/Millimeter-Wave Technique and Light Scattering Topography (LST). A subsurface damage profile that was less than one micrometer was controlled by chemical mechanical polishing after hydrogen-ion implantation. On the area with the subsurface damage, the Photoconductivity Amplitude (PCA) signals measured by the UV/Millimeter-Wave Technique drastically weakened and the haze values measured by LST increased. A clear correlation has been found between the peak depth of the subsurface damage and the haze value. The spectral analyses of the surface images obtained by Atomic Force Microscopy (AFM) were carried out in order to separate the influences of surface micro roughness and subsurface damage on the haze value. The contribution of subsurface damage to the haze value can be formulated as the convolution of the damage profile and the transparency function of the incident laser in silicon crystal.

scholarly journals QUASI-MILLIMETER WAVE TECHNIQUE USED FOR IMAGE OF WOOD

2018 ◽  
Vol 75 ◽  
pp. 19-24
Author(s):  
Dan Zhang ◽  
Chujing Zong ◽  
Atsushi Mase
Keyword(s):  
Millimeter Wave ◽  
Wave Technique

Silicon Wafer Subsurface Characterization with UV/Millimeter-Wave Technique

2000 ◽  
Vol 631 ◽  
Author(s):  
Yoh-Ichiro Ogita ◽  
Yuichiro Gan-nen
Keyword(s):  
Silicon Wafer ◽  
Millimeter Wave ◽  
Wave Reflection ◽  
Ultra Violet ◽  
High Sensitivity ◽  
Subsurface Damage ◽  
Subsurface Characterization ◽  
Commercial Use ◽  
Wave Technique ◽  
Damage Depth

ABSTRACTIn subsurface characterization for Si wafers using a photoconductivity technique with a ultra-violet photoexcitation and millimeter wave reflection, high sensitivity technique for100 GHz was discussed experimentally and theoretically. The technique detected photoconductivity decays measured for p/p+ and n/n+ epitaxial wafers. The epilayer contaminated with Mo and Fe was characterized by the technique. Photoconductivity amplitude (PCA) intensity measured for as-polished Si wafers in commercial use after removing the subsurface by SC1 cleanings well reflected the behavior of removal of slight subsurface damage induced by mirror-polishing. The damage depth was determined to be 21 nm.

Nondestructive Inspection of Chip Size Package by Millimeter Waves

2003 ◽  
Author(s):  
Yang Ju ◽  
Hiroshi Yamamoto ◽  
Masumi Saka
Keyword(s):  
Millimeter Wave ◽  
Millimeter Waves ◽  
Coaxial Line ◽  
Good Prospect ◽  
Network Analyzer ◽  
Integrity Assessment ◽  
Solder Bumps ◽  
Chip Size ◽  
Wave Technique ◽  
Wave Image

Chip size package was inspected by millimeter waves. Millimeter wave image was created using the phase and amplitude of the reflection coefficient, measured by a network analyzer. To obtain a high spatial resolution, an open-ended coaxial line sensor was used. Solder bumps and delamination under the silicon chip of the package were observed effectively. It is shown that millimeter wave technique has a good prospect for integrity assessment of chip size package.

Subsurface Damage Characterization of Hydrogen Ion Implanted Silicon Wafer with Uv/Millimeter-Wave Technique

2000 ◽  
Vol 631 ◽  
Author(s):  
Yoh-Ichiro Ogita ◽  
Ken-Ichi Kobayashi ◽  
Masaki Kurokawa ◽  
Hideyuki Kondo ◽  
Takeo Katoh
Keyword(s):  
Silicon Wafer ◽  
Millimeter Wave ◽  
Subsurface Damage ◽  
Blue Laser ◽  
Hydrogen Ion ◽  
Implantation Energy ◽  
Damage Characterization ◽  
Wave Technique ◽  
Microwave Probe

ABSTRACTThe UV/mm-wave technique composed of ultraviolet photoexcitation and millimeter wave probe was examined with photoconductivity amplitude (PCA) to characterize the slight subsurface damage induced by implanting H2+ ion into the subsurface at sub micron depth of Si wafers. The identical samples were also characterized using pulse photoconductivity amplitude (PPCA) obtained by another technique which is specified by blue laser photoexcitation and microwave probe. PCA decreased with increase of ion dose, which coincided well with the result in PPCA. PPCA decreased with increase of implantation energy as 90 to 120 keV, but PCA increased at 120keV. Both PCA and PPCA well reflected the damage at sub micron depth. PCA reflected damage in shallower depth compared to PPCA.

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