Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices

2013 ◽  
Vol 102 (1) ◽  
pp. 013120 ◽  
Author(s):  
Jiri Thoma ◽  
Baolai Liang ◽  
Charles Reyner ◽  
Tomasz Ochalski ◽  
David Williams ◽  
...  
2016 ◽  
Vol 30 (06) ◽  
pp. 1650063 ◽  
Author(s):  
Jingwen Sun ◽  
Jian Sun ◽  
Yunji Yi ◽  
Lucheng Qv ◽  
Shiqi Sun ◽  
...  

A low-cost and high-speed electro-optic (EO) switch using the guest–host EO material Disperse Red 1/Polymethyl Methacrylate (DR1/PMMA) was designed and fabricated. The DR1/PMMA material presented a low processing cost, an excellent photostability and a large EO coefficient of 13.1 pm/V. To improve the performance of the switch, the in-plane buried electrode structure was introduced in the polymer Mach–Zehnder waveguide to improve the poling and modulating efficiency. The characteristic parameters of the waveguide and the electrodes were carefully designed and the fabrication process was strictly controlled. Under 1550 nm, the insertion loss of the device was 12.7 dB. The measured switching rise time and fall time of the switch were 50.00 ns and 54.29 ns, respectively.


2021 ◽  
Vol 11 (13) ◽  
pp. 5787
Author(s):  
Toan-Thang Vu ◽  
Thanh-Tung Vu ◽  
Van-Doanh Tran ◽  
Thanh-Dong Nguyen ◽  
Ngoc-Tam Bui

The measurement speed and measurement accuracy of a displacement measuring interferometer are key parameters. To verify these parameters, a fast and high-accuracy motion is required. However, the displacement induced by a mechanical actuator generates disadvantageous features, such as slow motion, hysteresis, distortion, and vibration. This paper proposes a new method for a nonmechanical high-speed motion using an electro-optic modulator (EOM). The method is based on the principle that all displacement measuring interferometers measure the phase change to calculate the displacement. This means that the EOM can be used to accurately generate phase change rather than a mechanical actuator. The proposed method is then validated by placing the EOM into an arm of a frequency modulation interferometer. By using two lock-in amplifiers, the phase change in an EOM and, hence, the corresponding virtual displacement could be measured by the interferometer. The measurement showed that the system could achieve a displacement at 20 kHz, a speed of 6.08 mm/s, and a displacement noise level < 100 pm//√Hz above 2 kHz. The proposed virtual displacement can be applied to determine both the measurement speed and accuracy of displacement measuring interferometers, such as homodyne interferometers, heterodyne interferometers, and frequency modulated interferometers.


Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.


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