High-finesse silicon Fabry-Perot optical intensity modulator fabricated by merged epitaxial lateral overgrowth

1994 ◽  
Author(s):  
HanChieh Chao ◽  
Gerold W. Neudeck
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Optical Intensity ◽  
Intensity Modulator ◽  
Lateral Overgrowth ◽  
Fabry Perot ◽  
High Finesse

Fabry-Perot optical intensity modulator at 1.3 mu m in silicon

1991 ◽  
Vol 3 (3) ◽  
pp. 230-231 ◽  
Author(s):  
X. Xiao ◽  
J.C. Sturm ◽  
K.K. Goel ◽  
P.V. Schwartz
Keyword(s):  
Optical Intensity ◽  
Intensity Modulator ◽  
Fabry Perot

Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

2021 ◽  
Vol 118 (1) ◽  
pp. 012105
Author(s):  
Wenxin Tang ◽  
Fu Chen ◽  
Li zhang ◽  
Kun Xu ◽  
Xuan Zhang ◽  
...  
Keyword(s):  
Shallow Donor ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Donor Type

Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

2006 ◽  
Vol 89 (25) ◽  
pp. 251109 ◽  
Author(s):  
Te-Chung Wang ◽  
Tien-Chang Lu ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
Min Yu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Growth behavior of GaN epilayers on Si(111) grown by GaN nanowires assisted epitaxial lateral overgrowth

CrystEngComm ◽  
2012 ◽  
Vol 14 (17) ◽  
pp. 5558 ◽  
Author(s):  
Bo-Ra Yeom ◽  
R. Navamathavan ◽  
Ji-Hyeon Park ◽  
Yong-Ho Ra ◽  
Cheul-Ro Lee
Keyword(s):  
Growth Behavior ◽  
Epitaxial Lateral Overgrowth ◽  
Gan Nanowires ◽  
Lateral Overgrowth

Ultrabroad-bandwidth in-line MQW GaAs/GaAlAs optical intensity modulator

1997 ◽  
Author(s):  
Milson T. Camargo Silva ◽  
Carlos A. de Francisco
Keyword(s):  
Optical Intensity ◽  
Intensity Modulator

scholarly journals A fiber Fabry–Perot cavity with high finesse

2010 ◽  
Vol 12 (6) ◽  
pp. 065038 ◽  
Author(s):  
D Hunger ◽  
T Steinmetz ◽  
Y Colombe ◽  
C Deutsch ◽  
T W Hänsch ◽  
...  
Keyword(s):  
Fabry Perot ◽  
High Finesse
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