Effects of H2O on atomic hydrogen generation in hydrogen plasma

1993 ◽  
Author(s):  
Jun Kikuchi ◽  
Masafumi Suzuki ◽  
Hiroshi Yano ◽  
Shuzo Fujimura
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Generation ◽  
Hydrogen Plasma

Effects of H2O on Atomic Hydrogen Generation in Hydrogen Plasma

1993 ◽  
Vol 32 (Part 1, No. 6B) ◽  
pp. 3120-3124 ◽  
Author(s):  
Jun Kikuchi ◽  
Shuzo Fujimura ◽  
Masafumi Suzuki ◽  
Hiroshi Yano
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Generation ◽  
Hydrogen Plasma

scholarly journals Stark spectroscopy at Balmer-αline of atomic hydrogen for measuring sheath electric field in a hydrogen plasma

2017 ◽  
Vol 50 (23) ◽  
pp. 234003 ◽  
Author(s):  
Shusuke Nishiyama ◽  
Haruhisa Nakano ◽  
Motoshi Goto ◽  
Koichi Sasaki
Keyword(s):  
Electric Field ◽  
Atomic Hydrogen ◽  
Hydrogen Plasma ◽  
Stark Spectroscopy

Photoluminescence Detection of Shallow Impurity Neutralization in Iii-V Compound Semiconductors

1987 ◽  
Vol 104 ◽  
Author(s):  
Jörg Weber ◽  
Mandeep Singh
Keyword(s):  
Plasma Treatment ◽  
Atomic Hydrogen ◽  
Hydrogen Plasma ◽  
Compound Semiconductors ◽  
Exciton Luminescence ◽  
Before And After ◽  
Intensity Changes ◽  
Shallow Impurity ◽  
Intense Luminescence ◽  
Sulfur Donor

ABSTRACTWe studied the low-temperature photoluminescence (PL) of several III–V compound semiconductors before and after hydrogen-plasma treatment. Drastic intensity changes of the bound exciton luminescence after hydrogen plasma treatments indicate a neutralization of impurities by the atomic hydrogen. In GaP, neutralization of the sulfur donor as well as the acceptors (C, Zn, Cd) is observed. The intense luminescence of the exciton bound to isoelectronic N in GaP is fully quenched by hydrogen plasma treatment.

Removal of Fluorine From a Si (100) Surface by a Remote RF Hydrogen Plasma

1995 ◽  
Vol 386 ◽  
Author(s):  
J. P. Barnak ◽  
S. King ◽  
J. Montgomery ◽  
Ja-Hum Ku ◽  
R. J. Nemanich
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Plasma ◽  
Photoemission Spectroscopy ◽  
Fluorine Concentration ◽  
Plasma Exposure ◽  
Xps Spectra ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Vacuum Anneal

ABSTRACTFluorine contamination was removed from a Si(100) surface by an atomic H flux. The surface was intentionally contaminated to approximate the residual fluorine concentration remaining after a concentrated HF last process. By dipping the wafers in concentrated HF the thin oxide was removed and replaced with a hydrogen and fluorine terminated surface. This surface was then either vacuum annealed or exposed to a 20 Watt rf excited H-plasma at 50 mTorr, in order to achieve an atomically clean surface. The substrate temperature during the Hplasma exposure and vacuum anneal was 450°C. The surface chemistry was characterized with x-ray photoemission spectroscopy (XPS), auger electron spectroscopy (AES), and angle-resolved UV photoemission spectroscopy (ARUPS). The surface symmetry was characterized with low energy electron diffraction (LEED). Before the H-plasma exposure, the XPS spectra indicated Si-F bonding, and a l×1 LEED diffraction pattern was observed. Immediately following the Hplasma exposure, the fluorine concentration was reduced below detection limits of XPS, and the surface showed a 2×1 reconstruction. A mechanism is proposed by which molecular HF results from atomic hydrogen interactions with fluorine on the surface.

scholarly journals Photon shield for atomic hydrogen plasma sources

1999 ◽  
Vol 17 (2) ◽  
pp. 670-672 ◽  
Author(s):  
H. Nienhaus ◽  
B. Gergen ◽  
H. S. Bergh ◽  
A. Majumdar ◽  
W. H. Weinberg ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Plasma ◽  
Plasma Sources

Enhancement of Boron Activation in Shallow Junctions by Hydrogen

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Vengurlekar ◽  
S. Ashok ◽  
C. E. Kalnas ◽  
N. D. Theodore
Keyword(s):  
Atomic Hydrogen ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Cluster Formation ◽  
Relaxation Effect ◽  
Lattice Relaxation ◽  
Hydrogen Incorporation ◽  
Device Scaling ◽  
Shallow Junctions ◽  
Lower Temperature

ABSTRACTThe ability to activate greater amounts of dopants at lower temperatures is a persistent contingency in the continual drive for device scaling in Si microelectronics. We report on the effect of incorporating atomic hydrogen on the activation of implanted boron in shallow junctions. Hydrogen incorporation into the sample was carried out by exposure to an electron cyclotron resonance (ECR) hydrogen plasma. Enhanced activation was observed in hydrogenated samples for post-implantation annealing temperatures of 450°C and below, as measured by spreading resistance profilometry, and confirmed by identical boron atomic profile in hydrogenated and unhydrogenated samples. The enhancement in boron activation at lower temperature is attributed to the creation of vacancies in the boron-implanted region, the lattice-relaxation effect by the presence of atomic hydrogen, and the effect of atomic hydrogen on boron-interstitial cluster formation.

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