Ultrafast laser-induced crystallization of amorphous silicon films

2003 ◽  
Vol 42 (11) ◽  
pp. 3383 ◽  
Author(s):  
David J. Hwang
Keyword(s):  
Amorphous Silicon ◽  
Ultrafast Laser ◽  
Silicon Films ◽  
Induced Crystallization

Ultrafast laser-induced crystallization of amorphous silicon films

2002 ◽  
Author(s):  
Taeyul Choi ◽  
David J. Hwang ◽  
Constantine P. Grigoropoulos
Keyword(s):  
Amorphous Silicon ◽  
Ultrafast Laser ◽  
Silicon Films ◽  
Induced Crystallization

Spatially localized current-induced crystallization of amorphous silicon films

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2305-2309 ◽  
Author(s):  
B. Rezek ◽  
E. Šípek ◽  
M. Ledinský ◽  
P. Krejza ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Induced Crystallization

Effect of stress on the aluminum-induced crystallization of hydrogenated amorphous silicon films

2006 ◽  
Vol 21 (10) ◽  
pp. 2582-2586 ◽  
Author(s):  
Maruf Hossain ◽  
Husam H. Abu-Safe ◽  
Hameed Naseem ◽  
William D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Initial Stress ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Radius Of Curvature ◽  
Si Substrates ◽  
Before And After ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

The effect of stress, resulting from the presence of hydrogen, on the aluminum-induced crystallization of hydrogenated amorphous silicon films was studied. Layered thin films of hydrogenated and unhydrogenated amorphous silicon and aluminum, deposited by sputtering, were used to study this effect. The stress of the deposited films was determined by measuring the radius of curvature of c-Si substrates before and after deposition of the films. It was observed that unhydrogenated amorphous silicon films exhibit a high compressive stress compared with hydrogenated ones. The amount of stress is shown to decrease with increasing hydrogen content. It was also observed that aluminum always provides tensile stress. After the initial stress measurements, all the samples were annealed for 30 min at temperatures between 200 °C and 400 °C. X-ray diffraction was used to determine the crystallinity of the silicon films. The results of the study show that the temperature at which crystallization of amorphous silicon is initiated is lower for films with a lower initial stress.

Field-Assisted Germanium Induced Crystallization of Amorphous Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
J. Derakhshandeh ◽  
S. Mohajerzadeh ◽  
N. Golshani ◽  
E. Asl Soleimani ◽  
M.D. Robertson
Keyword(s):  
Electric Field ◽  
Amorphous Silicon ◽  
Applied Voltage ◽  
Crucial Role ◽  
Silicon Films ◽  
Electric Voltage ◽  
External Voltage ◽  
Annealing Conditions ◽  
Induced Crystallization

AbstractA field-assisted germanium-induced crystallization of amorphous silicon on glass is reported at temperatures below 500°C. Silicon films with a thickness of 0.1um are covered with 500Å of germanium as the seed of crystallization. Applying an electric field enhances the growth from both cathode and anode sides. XRD, SEM and TEM analyses have been used to study the crystallinity of the samples which have been treated under different annealing conditions, all confirming the polycrystalline nature of the annealed silicon films. The value of the applied voltage plays a crucial role in the crystalline quality of Si layers. While samples treated without an external voltage are not polycrystalline, an electric voltage of 10 V applied for a 1cm separation between anode and cathode, seems suitable for achieving good poly-crystalline Si layers. The size of grains varies between 0.1 and 0.2μm, as observed using SEM.

Arbitrary surface structuring of amorphous silicon films based on femtosecond-laser-induced crystallization

2006 ◽  
Vol 89 (15) ◽  
pp. 151907 ◽  
Author(s):  
Geon Joon Lee ◽  
Seok Ho Song ◽  
YoungPak Lee ◽  
Hyeonsik Cheong ◽  
Chong Seung Yoon ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Amorphous Silicon ◽  
Silicon Films ◽  
Surface Structuring ◽  
Induced Crystallization
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