The effect of high concentration of phosphorus in aluminum-induced crystallization of amorphous silicon films

2016 ◽  
Vol 618 ◽  
pp. 50-54 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Lee-Chi Luo ◽  
Sanjaya Brahma ◽  
Kuang-Yao Lo
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
High Concentration ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Effect of stress on the aluminum-induced crystallization of hydrogenated amorphous silicon films

2006 ◽  
Vol 21 (10) ◽  
pp. 2582-2586 ◽  
Author(s):  
Maruf Hossain ◽  
Husam H. Abu-Safe ◽  
Hameed Naseem ◽  
William D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Initial Stress ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Radius Of Curvature ◽  
Si Substrates ◽  
Before And After ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

The effect of stress, resulting from the presence of hydrogen, on the aluminum-induced crystallization of hydrogenated amorphous silicon films was studied. Layered thin films of hydrogenated and unhydrogenated amorphous silicon and aluminum, deposited by sputtering, were used to study this effect. The stress of the deposited films was determined by measuring the radius of curvature of c-Si substrates before and after deposition of the films. It was observed that unhydrogenated amorphous silicon films exhibit a high compressive stress compared with hydrogenated ones. The amount of stress is shown to decrease with increasing hydrogen content. It was also observed that aluminum always provides tensile stress. After the initial stress measurements, all the samples were annealed for 30 min at temperatures between 200 °C and 400 °C. X-ray diffraction was used to determine the crystallinity of the silicon films. The results of the study show that the temperature at which crystallization of amorphous silicon is initiated is lower for films with a lower initial stress.

Hydrophobic Surfaces Prepared by Aluminum-Induced Crystallization of Amorphous Silicon

2007 ◽  
Author(s):  
Ying Song ◽  
Rahul Premachandran Nair ◽  
Min Zou
Keyword(s):  
Amorphous Silicon ◽  
Annealing Temperature ◽  
Textured Surfaces ◽  
Surface Wetting ◽  
Water Contact ◽  
Annealing Conditions ◽  
Wetting Property ◽  
Percentage Area ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

This paper reports fabrication and understanding of hydrophobic silicon nano-textured surfaces produced by aluminum-induced crystallization (AIC) of amorphous silicon (a-Si). In this study, the effects of annealing temperature and duration on surface topography and wetting property were investigated. The results showed that surface wetting property directly correlates with the percentage area coverage by the nano-textures, which in turn was determined by the annealing conditions. The largest water contact angle (WCA) obtained from this research is 137°.

The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon

2004 ◽  
Vol 808 ◽  
Author(s):  
Maruf Hossain ◽  
Husam Abu-Safe ◽  
Marwan Barghouti ◽  
Hameed Naseem ◽  
William D. Brown
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Oxide Layer ◽  
Environmental Scanning ◽  
X Ray ◽  
Layer Sequence ◽  
Si Films ◽  
Induced Crystallization ◽  
Al Oxide ◽  
Aluminum Induced Crystallization

ABSTRACTThe effect of substrate temperature and interface oxide layer on aluminum induced crystallization (AIC) of amorphous silicon (a-Si) is investigated. The effect of substrate temperature on the AIC process was studied by changing the deposition temperate of a-Si from 200 to 300°C in a Al/a-Si/glass configuration. To study the effect of interface oxide on AIC, samples with a-Si/Al/glass, a-Si/Al-oxide/Al/glass, and Al/Si-oxide/a-Si/glass configurations were prepared at a fixed substrate temperature. The samples were annealed in the temperature range from 300°C to 525°C for different periods of time. The X-ray diffraction (XRD) patterns confirmed the crystallization of the a-Si films in the various configurations. From the analysis, we report that crystallization of a-Si happen at 350°C annealing temperature in the Al/a-Si/glass configuration. However, with or without the presence of Si-oxide at the interface, crystallization saturated after annealing for 20 minutes at 400°C. On the other hand, when Al-oxide is present at the interface, higher annealing temperatures and longer annealing times are required to saturate the crystallization of a-Si. Environmental Scanning Electron Microscope (ESEM) and Energy Dispersive X-Ray (EDX) mapping were used to study the surface morphology as well as the layer sequence after crystallization. This analysis revealed that Si-Al layer-exchange happens regardless of the deposited film configuration.

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