Field-assisted metal-induced crystallization of amorphous silicon films

2001 ◽  
Vol 19 (5) ◽  
pp. 2453-2455 ◽  
Author(s):  
Ali Khakifirooz ◽  
Shamsoddin Mohajerzadeh ◽  
Saber Haji
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

Optimization of the metal/silicon ratio on nickel assisted crystallization of amorphous silicon

2005 ◽  
Vol 869 ◽  
Author(s):  
L. Pereira ◽  
M. Beckers ◽  
R.M.S. Martins ◽  
E. Fortunato ◽  
R. Martins
Keyword(s):  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Crystallization Time ◽  
Crystalline Fraction ◽  
Nickel Metal ◽  
Metal Induced Crystallization ◽  
Structural Improvement ◽  
Short Annealing ◽  
The One ◽  
Induced Crystallization

AbstractThe aim of this work is to optimize the metal/silicon ratio on nickel metal induced crystallization of silicon. For this purpose amorphous silicon layers with 80, 125 and 220 nm thick were used on the top of which 0.5 nm of Ni was deposited and annealed during the required time to full crystallize the a-Si. The data show that the 80 nm a-Si layer reaches a crystalline fraction of 95.7% (as detected by spectroscopic ellipsometry) after annealed for only 2 hours. No significant structural improvement is detected by ellipsometry neither by XRD when annealing the films for longer times. However, on 125 nm thick samples, after annealing for 2 hours the crystalline fraction is only 59.7%, reaching a similar value to the one with 80 nm only after 5 hours, with a crystalline fraction of 92.2%. Here again no significant improvements were achieved by using longer annealing times. Finally, the 220 nm thick a-Si sample is completely crystallized only after 10 hours annealing. These data clear suggest that the crystallization of thicker a-Si layers requires thicker Ni films to be effective for short annealing times. A direct dependence of the crystallization time on the metal/silicon ratio was observed and estimated.

Spatially localized current-induced crystallization of amorphous silicon films

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2305-2309 ◽  
Author(s):  
B. Rezek ◽  
E. Šípek ◽  
M. Ledinský ◽  
P. Krejza ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Induced Crystallization

Analytical Studies of the Capping Layer Effect on Aluminum Induced Crystallization of Amorphous Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Husam Abu-Safe ◽  
Abul-Khair M. Sajjadul-Islam ◽  
Hameed A. Naseem ◽  
William D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Layer Structure ◽  
Silicon Layer ◽  
Nodule Formation ◽  
Capping Layer ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Layer Effect ◽  
Polysilicon Films ◽  
Induced Crystallization

AbstractThe effect of capping layer on metal induced crystallization of amorphous silicon was studied. Three sets of samples were prepared in this study. All samples had the basic layer structure of amorphous silicon layer deposited on a glass substrate. This was followed by a thin aluminum layer deposition. The second and third sets, however, had a third layer of amorphous silicon with thicknesses of 20 and 50 nm, respectively. These layers were deposited on top of the aluminum. The samples were annealed at 400°C for 15, 30 and 45 minutes. The crystallization fraction in the resultant films was analyzed using X-Ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and atomic force microscopy. It was observed that the capping layer reduces nodule formation improving the smoothness of the crystallized polysilicon films.

Metal induced crystallization of amorphous silicon

1987 ◽  
Vol 5 (4) ◽  
pp. 1447-1450 ◽  
Author(s):  
A. E. Robertson ◽  
L. G. Hultman ◽  
H. T. G. Hentzell ◽  
S.‐E. Hörnström ◽  
G. Shaofang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

Effect of stress on the aluminum-induced crystallization of hydrogenated amorphous silicon films

2006 ◽  
Vol 21 (10) ◽  
pp. 2582-2586 ◽  
Author(s):  
Maruf Hossain ◽  
Husam H. Abu-Safe ◽  
Hameed Naseem ◽  
William D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Initial Stress ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Radius Of Curvature ◽  
Si Substrates ◽  
Before And After ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

The effect of stress, resulting from the presence of hydrogen, on the aluminum-induced crystallization of hydrogenated amorphous silicon films was studied. Layered thin films of hydrogenated and unhydrogenated amorphous silicon and aluminum, deposited by sputtering, were used to study this effect. The stress of the deposited films was determined by measuring the radius of curvature of c-Si substrates before and after deposition of the films. It was observed that unhydrogenated amorphous silicon films exhibit a high compressive stress compared with hydrogenated ones. The amount of stress is shown to decrease with increasing hydrogen content. It was also observed that aluminum always provides tensile stress. After the initial stress measurements, all the samples were annealed for 30 min at temperatures between 200 °C and 400 °C. X-ray diffraction was used to determine the crystallinity of the silicon films. The results of the study show that the temperature at which crystallization of amorphous silicon is initiated is lower for films with a lower initial stress.

Sign in / Sign up

Export Citation Format

Share Document