Infrared detector performance in an area array

2001 ◽  
Vol 40 (5) ◽  
pp. 679 ◽  
Author(s):  
Vikram Dhar
Keyword(s):  
Infrared Detector ◽  
Detector Performance ◽  
Area Array

Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector

2013 ◽  
Vol 61 (1) ◽  
pp. 211-220 ◽  
Author(s):  
P. Martyniuk ◽  
A. Rogalski
Keyword(s):  
Bias Voltage ◽  
State Of The Art ◽  
Structural Parameters ◽  
Infrared Detector ◽  
Differential Resistance ◽  
The State ◽  
Theoretical Modelling ◽  
Detector Performance ◽  
Type Detector ◽  
Hgcdte Detector

Abstract The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance. The UBIRD nBn/B-n type HgCdTe detector was modelled using commercially available software APSYS. Detailed analysis of the detector’s performance (such as dark current, photocurrent, responsivity, and detectivity) versus bias voltage, operating temperatures, and structural parameters (cap, barrier, and absorber’s doping as well as cap and barrier compositions) were performed pointing out optimal working conditions. Both conduction and valence band alignments of the HgCdTe nBn/B-n type detector structure was simulated stressing their importance on detectors performance. It was shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allow to obtain detectivities of D* = (3-10)×109 cmHz1/2/W at T = 200 K for detectors with cut-off wavelength of 5.2 μm The differential resistance area product of RA = 0.15-0.4 cm2 at T = 230 K for bias voltage V = 50 mV was estimated. Finally, the state of the art of UBIRD HgCdTe nBn/B-n type detector performance was compared to InAs/GaSb/B-Al0.2Ga0.8Sb T2SLs nBn detector, InAs/GaSb T2SLs PIN and the HOT HgCdTe bulk photodiodes’ operated at near-room temperature (T = 230 K). It was shown that the RA product of the MWIR UBIRD nBn/B-n type HgCdTe detector can reach a comparable level to the state of the art of the HgCdTe HOT bulk photodiodes and two types of type-II superlattice detectors: PIN photodiodes and nBn detectors

Study on Uncooled Hybrid Focal Plane Detector Arrays

2013 ◽  
Vol 389 ◽  
pp. 211-216
Author(s):  
Mao Yan Fan ◽  
Li Fang Zhang
Keyword(s):  
Thick Film ◽  
Integrated Circuit ◽  
Focal Plane ◽  
Infrared Detector ◽  
Development Trend ◽  
Ferroelectric Materials ◽  
Structure Design ◽  
Sensitive Material ◽  
Detector Performance ◽  
Plane Detector

A thick film array of high sensitive UFPA detector, with 16×16 units, is described in this paper. A micromachining capacitive pixel structure of infrared detector is provided, with the doped (Ba, Sr) TiO3 (BST) thick film as sensitive material. The key factors that affect the detector performance are described, and the basic physical and electrical parameters of ferroelectric materials that the detector needs are given. In addition, the heat insulation technique and the corresponding parameters are provided. The capacitance increment of pixel for this structure is approximately equal to that of infrared detector with equivalent sensitive area, and then the parasitic capacitance between the pixel and substrate electrode lead is reduced. It is easy to design the integrated circuit because the infrared detector with this structure needs only low precision for the circuit. This design idea for array structure of infrared matches the development trend of structure design of infrared focal plane pixel with large array, which paves the way to develop new UFPA detector.

New Approaches for Formation of Ultra-Thin PtSi Layers for Infrared Applications

1998 ◽  
Vol 514 ◽  
Author(s):  
Ricardo A. Donaton ◽  
Sing Jin ◽  
Hugo Bender ◽  
Maxim Zagrebnov ◽  
Kris Baert ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Infrared Detector ◽  
High Vacuum ◽  
Deposition Process ◽  
Critical Issue ◽  
Device Fabrication ◽  
Thin Layers ◽  
Process Window ◽  
Detector Performance ◽  
Silicide Layer

ABSTRACTPtSi is one of the most used silicides in infrared Schottky barrier detectors due to its low Schottky barrier to p-type Si ( Øb ∼ 0.23 eV). Control of the thickness and uniformity of the silicide layer is fundamental for a good infrared detector performance, since the silicide thickness has to be in the range of 3 to 8 nm. Such thin layers are usually made by evaporation of Pt followed by a furnace annealing. We will show different approaches for fabrication of utra-thin PtSi layers. In all of the processes, high-vacuum sputtering is used for Pt deposition and the silicidation is performed in a rapid thermal annealing system. Smooth and uniform Pt Si layers down to 3 nm thick are formed in this way. It will be shown that the controllability of the thickness during sputter deposition is not a critical issue and the deposition process has a large process window. Moreover, when taking an optimal approach, a large process window can also be found for the RTA step. The implementation of these approaches for device fabrication and some electrial results of diodes made with them will also be presented.

IR detector performance in an area array

2000 ◽  
Author(s):  
Vikram Dhar ◽  
Vishnu Gopal ◽  
Vikram Kumar
Keyword(s):  
Ir Detector ◽  
Detector Performance ◽  
Area Array

Laboratory and In-Flight Measurements at 10–55 K of InSb Near-Infrared Detector Performance for the Warm Mission of theAKARISatellite

2011 ◽  
Vol 123 (906) ◽  
pp. 942-952 ◽  
Author(s):  
Tatsuya Mori ◽  
Hidehiro Kaneda ◽  
Daisuke Ishihara ◽  
Shinki Oyabu ◽  
Takehiko Wada
Keyword(s):  
Near Infrared ◽  
Infrared Detector ◽  
Detector Performance ◽  
Flight Measurements
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