Influence of modulation doping on p-i-p quantum-dots (InAs/GaAs)-based infrared detector performance

2019 ◽  
Author(s):  
Vidya Deviprasad ◽  
Hemant Ghadi ◽  
Debabrata Das ◽  
Debiprasad Panda ◽  
Vinayak Chavan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detector ◽  
Modulation Doping ◽  
Detector Performance

Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector

2013 ◽  
Vol 61 (1) ◽  
pp. 211-220 ◽  
Author(s):  
P. Martyniuk ◽  
A. Rogalski
Keyword(s):  
Bias Voltage ◽  
State Of The Art ◽  
Structural Parameters ◽  
Infrared Detector ◽  
Differential Resistance ◽  
The State ◽  
Theoretical Modelling ◽  
Detector Performance ◽  
Type Detector ◽  
Hgcdte Detector

Abstract The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance. The UBIRD nBn/B-n type HgCdTe detector was modelled using commercially available software APSYS. Detailed analysis of the detector’s performance (such as dark current, photocurrent, responsivity, and detectivity) versus bias voltage, operating temperatures, and structural parameters (cap, barrier, and absorber’s doping as well as cap and barrier compositions) were performed pointing out optimal working conditions. Both conduction and valence band alignments of the HgCdTe nBn/B-n type detector structure was simulated stressing their importance on detectors performance. It was shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allow to obtain detectivities of D* = (3-10)×109 cmHz1/2/W at T = 200 K for detectors with cut-off wavelength of 5.2 μm The differential resistance area product of RA = 0.15-0.4 cm2 at T = 230 K for bias voltage V = 50 mV was estimated. Finally, the state of the art of UBIRD HgCdTe nBn/B-n type detector performance was compared to InAs/GaSb/B-Al0.2Ga0.8Sb T2SLs nBn detector, InAs/GaSb T2SLs PIN and the HOT HgCdTe bulk photodiodes’ operated at near-room temperature (T = 230 K). It was shown that the RA product of the MWIR UBIRD nBn/B-n type HgCdTe detector can reach a comparable level to the state of the art of the HgCdTe HOT bulk photodiodes and two types of type-II superlattice detectors: PIN photodiodes and nBn detectors

Study on Uncooled Hybrid Focal Plane Detector Arrays

2013 ◽  
Vol 389 ◽  
pp. 211-216
Author(s):  
Mao Yan Fan ◽  
Li Fang Zhang
Keyword(s):  
Thick Film ◽  
Integrated Circuit ◽  
Focal Plane ◽  
Infrared Detector ◽  
Development Trend ◽  
Ferroelectric Materials ◽  
Structure Design ◽  
Sensitive Material ◽  
Detector Performance ◽  
Plane Detector

A thick film array of high sensitive UFPA detector, with 16×16 units, is described in this paper. A micromachining capacitive pixel structure of infrared detector is provided, with the doped (Ba, Sr) TiO3 (BST) thick film as sensitive material. The key factors that affect the detector performance are described, and the basic physical and electrical parameters of ferroelectric materials that the detector needs are given. In addition, the heat insulation technique and the corresponding parameters are provided. The capacitance increment of pixel for this structure is approximately equal to that of infrared detector with equivalent sensitive area, and then the parasitic capacitance between the pixel and substrate electrode lead is reduced. It is easy to design the integrated circuit because the infrared detector with this structure needs only low precision for the circuit. This design idea for array structure of infrared matches the development trend of structure design of infrared focal plane pixel with large array, which paves the way to develop new UFPA detector.

New Approaches for Formation of Ultra-Thin PtSi Layers for Infrared Applications

1998 ◽  
Vol 514 ◽  
Author(s):  
Ricardo A. Donaton ◽  
Sing Jin ◽  
Hugo Bender ◽  
Maxim Zagrebnov ◽  
Kris Baert ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Infrared Detector ◽  
High Vacuum ◽  
Deposition Process ◽  
Critical Issue ◽  
Device Fabrication ◽  
Thin Layers ◽  
Process Window ◽  
Detector Performance ◽  
Silicide Layer

ABSTRACTPtSi is one of the most used silicides in infrared Schottky barrier detectors due to its low Schottky barrier to p-type Si ( Øb ∼ 0.23 eV). Control of the thickness and uniformity of the silicide layer is fundamental for a good infrared detector performance, since the silicide thickness has to be in the range of 3 to 8 nm. Such thin layers are usually made by evaporation of Pt followed by a furnace annealing. We will show different approaches for fabrication of utra-thin PtSi layers. In all of the processes, high-vacuum sputtering is used for Pt deposition and the silicidation is performed in a rapid thermal annealing system. Smooth and uniform Pt Si layers down to 3 nm thick are formed in this way. It will be shown that the controllability of the thickness during sputter deposition is not a critical issue and the deposition process has a large process window. Moreover, when taking an optimal approach, a large process window can also be found for the RTA step. The implementation of these approaches for device fabrication and some electrial results of diodes made with them will also be presented.

Quantum structures for multiband photon detection

2006 ◽  
Vol 14 (2) ◽  
Author(s):  
A. Perera
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Dark Current ◽  
Room Temperature ◽  
Dominant Role ◽  
Infrared Detector ◽  
Dual Band ◽  
Ultraviolet Region ◽  
Free Carrier Absorption ◽  
Internal Photoemission

AbstractThe work describes multiband photon detectors based on semiconductor micro-and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot structures, transitions are from one state to another, while free carrier absorption and internal photoemission play the dominant role in homo or heterojunction detectors. Quantum dots-in-a-well (DWELL) detectors can tailor the response wavelength by varying the size of the well. A tunnelling quantum dot infrared photodetector (T-QDIP) could operate at room temperature by blocking the dark current except in the case of resonance. Photoexcited carriers are selectively collected from InGaAs quantum dots by resonant tunnelling, while the dark current is blocked by AlGaAs/InGaAs tunnelling barriers placed in the structure. A two-colour infrared detector with photoresponse peaks at ∼6 and ∼17 μm at room temperature will be discussed. A homojunction or heterojunction interfacial workfunction internal photoemission (HIWIP or HEIWIP) infrared detector, formed by a doped emitter layer, and an intrinsic layer acting as the barrier followed by another highly doped contact layer, can detect near infrared (NIR) photons due to interband transitions and mid/far infrared (MIR/FIR) radiation due to intraband transitions. The threshold wavelength of the interband response depends on the band gap of the barrier material, and the MIR/FIR response due to intraband transitions can be tailored by adjusting the band offset between the emitter and the barrier. GaAs/AlGaAs will provide NIR and MIR/FIR dual band response, and with GaN/AlGaN structures the detection capability can be extended into the ultraviolet region. These detectors are useful in numerous applications such as environmental monitoring, medical diagnosis, battlefield-imaging, space astronomy applications, mine detection, and remote-sensing.

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