Laboratory and In-Flight Measurements at 10–55 K of InSb Near-Infrared Detector Performance for the Warm Mission of theAKARISatellite

2011 ◽  
Vol 123 (906) ◽  
pp. 942-952 ◽  
Author(s):  
Tatsuya Mori ◽  
Hidehiro Kaneda ◽  
Daisuke Ishihara ◽  
Shinki Oyabu ◽  
Takehiko Wada
Keyword(s):  
Near Infrared ◽  
Infrared Detector ◽  
Detector Performance ◽  
Flight Measurements

Monolithically integrated near-infrared and mid-infrared detector array for spectral imaging

2007 ◽  
Vol 50 (2-3) ◽  
pp. 211-216 ◽  
Author(s):  
S.V. Bandara ◽  
S.D. Gunapala ◽  
D.Z. Ting ◽  
J.K. Liu ◽  
C.J. Hill ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Detector ◽  
Spectral Imaging ◽  
Detector Array ◽  
Mid Infrared ◽  
Monolithically Integrated ◽  
Infrared Detector Array

scholarly journals Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 428
Author(s):  
Reza Masoudian Saadabad ◽  
Christian Pauly ◽  
Norbert Herschbach ◽  
Dragomir N. Neshev ◽  
Haroldo T. Hattori ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Speed ◽  
Near Infrared ◽  
Infrared Detector ◽  
High Quantum Efficiency ◽  
Fast Detection ◽  
High Quantum ◽  
Resonant Modes ◽  
Infrared Wavelengths ◽  
Dielectric Metasurface

Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel, a high-speed photodetector with a bandwidth of 65 GHz has been achieved. At the same time, high quantum efficiency for near-infrared illumination can be obtained by the engineering of optical resonant modes to localize optical energy inside the intrinsic Ge disks. Furthermore, small junction capacitance and the possibility of zero/low bias operation have been shown. Our results show that all-dielectric metasurfaces can improve the performance of photodetectors.

scholarly journals Improved Reference Sampling and Subtraction: A Technique for Reducing the Read Noise of Near-infrared Detector Systems

2017 ◽  
Vol 129 (980) ◽  
pp. 105003 ◽  
Author(s):  
Bernard J. Rauscher ◽  
Richard G. Arendt ◽  
D. J. Fixsen ◽  
Matthew A. Greenhouse ◽  
Matthew Lander ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Detector

Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction

2012 ◽  
Vol 100 (6) ◽  
pp. 061109 ◽  
Author(s):  
Shiyang Zhu ◽  
H. S. Chu ◽  
G. Q. Lo ◽  
P. Bai ◽  
D. L. Kwong
Keyword(s):  
Near Infrared ◽  
Infrared Detector ◽  
Metal Silicide ◽  
Self Assembled

Monolithically integrated near-infrared and mid-infrared detector array

2005 ◽  
Author(s):  
S. V. Bandara ◽  
S. D. Gunapala ◽  
D Z. Ting ◽  
J. K. Liu ◽  
C. J. Hill ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Detector ◽  
Detector Array ◽  
Mid Infrared ◽  
Monolithically Integrated ◽  
Infrared Detector Array

scholarly journals Infrared detector activities at NASA Langley Research Center

2008 ◽  
Vol 1076 ◽  
Author(s):  
M. Nurul Abedin ◽  
Tamer F Refaat ◽  
Oleg V Sulima ◽  
Farzin Amzajerdian
Keyword(s):  
Remote Sensing ◽  
Near Infrared ◽  
Infrared Detector ◽  
Avalanche Photodiode ◽  
Low Noise ◽  
Focal Plane Arrays ◽  
Research Center ◽  
Single Element ◽  
Sensing Applications ◽  
Langley Research Center

ABSTRACTInfrared detector development and characterization at NASA Langley Research Center will be reviewed. These detectors were intended for ground, airborne, and space borne remote sensing applications. Discussion will be focused on recently developed single-element infrared detector and future development of near-infrared focal plane arrays (FPA). The FPA will be applied to next generation space-based instruments. These activities are based on phototransistor and avalanche photodiode technologies, which offer high internal gain and relatively low noise-equivalent-power. These novel devices will improve the sensitivity of active remote sensing instruments while eliminating the need for a high power laser transmitter.

Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector

2013 ◽  
Vol 61 (1) ◽  
pp. 211-220 ◽  
Author(s):  
P. Martyniuk ◽  
A. Rogalski
Keyword(s):  
Bias Voltage ◽  
State Of The Art ◽  
Structural Parameters ◽  
Infrared Detector ◽  
Differential Resistance ◽  
The State ◽  
Theoretical Modelling ◽  
Detector Performance ◽  
Type Detector ◽  
Hgcdte Detector

Abstract The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance. The UBIRD nBn/B-n type HgCdTe detector was modelled using commercially available software APSYS. Detailed analysis of the detector’s performance (such as dark current, photocurrent, responsivity, and detectivity) versus bias voltage, operating temperatures, and structural parameters (cap, barrier, and absorber’s doping as well as cap and barrier compositions) were performed pointing out optimal working conditions. Both conduction and valence band alignments of the HgCdTe nBn/B-n type detector structure was simulated stressing their importance on detectors performance. It was shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allow to obtain detectivities of D* = (3-10)×109 cmHz1/2/W at T = 200 K for detectors with cut-off wavelength of 5.2 μm The differential resistance area product of RA = 0.15-0.4 cm2 at T = 230 K for bias voltage V = 50 mV was estimated. Finally, the state of the art of UBIRD HgCdTe nBn/B-n type detector performance was compared to InAs/GaSb/B-Al0.2Ga0.8Sb T2SLs nBn detector, InAs/GaSb T2SLs PIN and the HOT HgCdTe bulk photodiodes’ operated at near-room temperature (T = 230 K). It was shown that the RA product of the MWIR UBIRD nBn/B-n type HgCdTe detector can reach a comparable level to the state of the art of the HgCdTe HOT bulk photodiodes and two types of type-II superlattice detectors: PIN photodiodes and nBn detectors

Optimization and performance of the Robert Stobie Spectrograph Near-InfraRed detector system

2018 ◽  
Vol 4 (01) ◽  
pp. 1
Author(s):  
Gregory Mosby ◽  
Briana Indahl ◽  
Nathan Eggen ◽  
Marsha Wolf ◽  
Eric Hooper ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Detector ◽  
Detector System ◽  
And Performance ◽  
Optimization And Performance

Study on Uncooled Hybrid Focal Plane Detector Arrays

2013 ◽  
Vol 389 ◽  
pp. 211-216
Author(s):  
Mao Yan Fan ◽  
Li Fang Zhang
Keyword(s):  
Thick Film ◽  
Integrated Circuit ◽  
Focal Plane ◽  
Infrared Detector ◽  
Development Trend ◽  
Ferroelectric Materials ◽  
Structure Design ◽  
Sensitive Material ◽  
Detector Performance ◽  
Plane Detector

A thick film array of high sensitive UFPA detector, with 16×16 units, is described in this paper. A micromachining capacitive pixel structure of infrared detector is provided, with the doped (Ba, Sr) TiO3 (BST) thick film as sensitive material. The key factors that affect the detector performance are described, and the basic physical and electrical parameters of ferroelectric materials that the detector needs are given. In addition, the heat insulation technique and the corresponding parameters are provided. The capacitance increment of pixel for this structure is approximately equal to that of infrared detector with equivalent sensitive area, and then the parasitic capacitance between the pixel and substrate electrode lead is reduced. It is easy to design the integrated circuit because the infrared detector with this structure needs only low precision for the circuit. This design idea for array structure of infrared matches the development trend of structure design of infrared focal plane pixel with large array, which paves the way to develop new UFPA detector.

New Approaches for Formation of Ultra-Thin PtSi Layers for Infrared Applications

1998 ◽  
Vol 514 ◽  
Author(s):  
Ricardo A. Donaton ◽  
Sing Jin ◽  
Hugo Bender ◽  
Maxim Zagrebnov ◽  
Kris Baert ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Infrared Detector ◽  
High Vacuum ◽  
Deposition Process ◽  
Critical Issue ◽  
Device Fabrication ◽  
Thin Layers ◽  
Process Window ◽  
Detector Performance ◽  
Silicide Layer

ABSTRACTPtSi is one of the most used silicides in infrared Schottky barrier detectors due to its low Schottky barrier to p-type Si ( Øb ∼ 0.23 eV). Control of the thickness and uniformity of the silicide layer is fundamental for a good infrared detector performance, since the silicide thickness has to be in the range of 3 to 8 nm. Such thin layers are usually made by evaporation of Pt followed by a furnace annealing. We will show different approaches for fabrication of utra-thin PtSi layers. In all of the processes, high-vacuum sputtering is used for Pt deposition and the silicidation is performed in a rapid thermal annealing system. Smooth and uniform Pt Si layers down to 3 nm thick are formed in this way. It will be shown that the controllability of the thickness during sputter deposition is not a critical issue and the deposition process has a large process window. Moreover, when taking an optimal approach, a large process window can also be found for the RTA step. The implementation of these approaches for device fabrication and some electrial results of diodes made with them will also be presented.

Sign in / Sign up

Export Citation Format

Share Document