scholarly journals Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices

2021 ◽  
Vol 39 (5) ◽  
pp. 052401
Author(s):  
Emanuel Knehr ◽  
Mario Ziegler ◽  
Sven Linzen ◽  
Konstantin Ilin ◽  
Patrick Schanz ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Niobium Nitride ◽  
Wafer Level ◽  
Quantum Devices

Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition

2012 ◽  
Vol 26 (2) ◽  
pp. 025008 ◽  
Author(s):  
Mario Ziegler ◽  
Ludwig Fritzsch ◽  
Julia Day ◽  
Sven Linzen ◽  
Solveig Anders ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Niobium Nitride ◽  
Layer Deposition ◽  
Metal Organic

scholarly journals Improved critical temperature of superconducting plasma-enhanced atomic layer deposition of niobium nitride thin films by thermal annealing

2020 ◽  
Vol 709 ◽  
pp. 138232
Author(s):  
Liang Tian ◽  
Ivane Bottala-Gambetta ◽  
Victor Marchetto ◽  
Manoël Jacquemin ◽  
Alexandre Crisci ◽  
...  
Keyword(s):  
Thin Films ◽  
Critical Temperature ◽  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Atomic Layer ◽  
Niobium Nitride ◽  
Layer Deposition

scholarly journals Synthesis of few-layer 2H-MoSe2 thin films with wafer-level homogeneity for high-performance photodetector

Nanophotonics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 1959-1969 ◽  
Author(s):  
Tian-Jun Dai ◽  
Yu-Chen Liu ◽  
Xu-Dong Fan ◽  
Xing-Zhao Liu ◽  
Dan Xie ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Deep Understanding ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Fast Response ◽  
Wafer Level ◽  
Large Area ◽  
Carrier Recombination ◽  
Layer Deposition

AbstractThe unique structural and physical properties of two-dimensional (2D) atomic layer semiconductors render them promising candidates for electronic or optoelectronic devices. However, the lack of efficient and stable approaches to synthesize large-area thin films with excellent uniformity hinders their realistic applications. In this work, we reported a method involving atomic layer deposition and a chemical vapor deposition chamber to produce few-layer 2H-MoSe2 thin films with wafer-level uniformity. The reduction of MoO3 was found indispensable for the successful synthesis of MoSe2 films due to the low vaporization temperature. Moreover, a metal-semiconductor-metal photodetector (PD) was fabricated and investigated systematically. We extracted an ultrahigh photoresponsivity approaching 101 A/W with concomitantly high external quantum efficiency up to 19,668% due to the produced gain arising from the holes trapped at the metal/MoSe2 interface, the band tail state contribution, and the photogating effect. A fast response time of 22 ms was observed and attributed to effective nonequilibrium carrier recombination. Additionally, the ultrahigh photoresponsivity and low dark current that originated from Schottky barrier resulted in a record-high specific detectivity of up to 2×1013 Jones for 2D MoSe2/MoS2 PDs. Our findings revealed a pathway for the development of high-performance PDs based on 2D MoSe2 that are inexpensive, large area, and suitable for mass production and contribute to a deep understanding of the photoconductivity mechanisms in atomically thin MoSe2. We anticipate that these results are generalizable to other layer semiconductors as well.

scholarly journals On the Use of MOFs and ALD Layers as Nanomembranes for the Enhancement of Gas Sensors Selectivity

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1552 ◽  
Author(s):  
Weber ◽  
Graniel ◽  
Balme ◽  
Miele ◽  
Bechelany
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Metal Organic Frameworks ◽  
Atomic Layer ◽  
Operational Performance ◽  
Layer Deposition ◽  
Metal Organic ◽  
Further Development ◽  
Different Gases

Improving the selectivity of gas sensors is crucial for their further development. One effective route to enhance this key property of sensors is the use of selective nanomembrane materials. This work aims to present how metal-organic frameworks (MOFs) and thin films prepared by atomic layer deposition (ALD) can be applied as nanomembranes to separate different gases, and hence improve the selectivity of gas sensing devices. First, the fundamentals of the mechanisms and configuration of gas sensors will be given. A selected list of studies will then be presented to illustrate how MOFs and ALD materials can be implemented as nanomembranes and how they can be implemented to improve the operational performance of gas sensing devices. This review comprehensively shows the benefits of these novel selective nanomaterials and opens prospects for the sensing community.

Atomic Layer Modulation of Multicomponent Thin Films through Combination of Experimental and Theoretical Approaches

2021 ◽  
Author(s):  
Chi Thang Nguyen ◽  
Bonwook Gu ◽  
Taehoon Cheon ◽  
Jeongwoo Park ◽  
Mohammad Rizwan Khan ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Theoretical Approaches

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition
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