scholarly journals Temperature dependence of the optical phonon reflection band in GaP

2021 ◽  
Vol 39 (5) ◽  
pp. 052201
Author(s):  
Nuwanjula S. Samarasingha ◽  
Stefan Zollner
Keyword(s):  
Temperature Dependence ◽  
Optical Phonon ◽  
Reflection Band

Study of anharmonicity in pure and doped InSe by Raman scattering

2018 ◽  
Vol 32 (30) ◽  
pp. 1850340 ◽  
Author(s):  
Mahmoud Zolfaghari
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Temperature Variation ◽  
Optical Phonon ◽  
Line Center ◽  
Anharmonic Effect ◽  
Layered Semiconductor ◽  
Center Shift ◽  
Raman Modes ◽  
Quartic Anharmonicity

With the help of temperature dependence, Raman scattering anharmonic effect of various modes of layered semiconductor InSe over temperature range of 20–650 K has been studied. It was found that with an increase in temperature, anharmonicity will increase. Two and three phonons coupling with optical phonon, are used to describe temperature-induced anharmonicity in the linewidth of Raman modes. It was found that the temperature variation of the phonon parameter can be accounted for well by the cubic term in anharmonic model. To describe line-center shift of Raman modes, a model not considering independently cubic and quartic anharmonicity was used. A similar study has been done for InSe doped with different concentration of GaS dopant. The result of temperature study of InSe doped with GaS revealed that in this case anharmonicity increases with an increase in dopant and an increase in temperature.

The Temperature Dependence of Optical Phonon Scattering in Graphene under Strong Magnetic Field

2013 ◽  
Vol 82 (9) ◽  
pp. 094606 ◽  
Author(s):  
Zi-Wu Wang ◽  
Lei Liu ◽  
Lin Shi ◽  
Xiao-Jing Gong ◽  
Wei-Ping Li ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Temperature Dependence ◽  
Strong Magnetic Field ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Optical Phonon Scattering

Temperature dependence of optical phonon lifetimes in ZnSe

1996 ◽  
Vol 226 (4) ◽  
pp. 331-337 ◽  
Author(s):  
Suruchi Anand ◽  
Prabhat Verma ◽  
K.P Jain ◽  
S.C Abbi
Keyword(s):  
Temperature Dependence ◽  
Optical Phonon

1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

2000 ◽  
Vol 14 (07) ◽  
pp. 751-760 ◽  
Author(s):  
F. V. GASPARYAN ◽  
S. V. MELKONYAN ◽  
V. M. AROUTIOUNYAN ◽  
H. V. ASRIYAN
Keyword(s):  
Experimental Data ◽  
Spectral Density ◽  
Temperature Dependence ◽  
Conduction Electron ◽  
Optical Phonon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Analytical Expressions

The low-frequency noise spectral density with the 1/f spectrum for homopolar and heteropolar semi-conductors is theoretically obtained taking into account conduction electron–optical phonon interactions. The analytical expressions of the spectral density and Hooge's α H parameter are presented. The analytical temperature dependence of Hooge's parameter is compared with experimental data for n-Si and n-GaAs.

Hole mobility in Cu2O.I. Scattering by lattice vibrations

1970 ◽  
Vol 48 (22) ◽  
pp. 2643-2656 ◽  
Author(s):  
R. Kužel ◽  
F. L. Weichman
Keyword(s):  
Activation Energy ◽  
Dielectric Constant ◽  
Vibrational Spectrum ◽  
Temperature Dependence ◽  
Optical Phonon ◽  
Hall Current ◽  
Hole Mobility ◽  
Guard Ring ◽  
Lattice Vibrations ◽  
Optical Phonons

The hole mobility in Cu2O was measured using guard ring and Hall current techniques over a temperature range of +200 to −125 °C. For samples with highest mobility the temperature dependence was found to be approximately exponential with different activation energy above and below +60 °C. The results are explained on the basis of the known vibrational spectrum of Cu2O with polar scattering by an optical phonon of 0.0795 eV and nonpolar scattering by optical phonons of 0.139, 0.023, and 0.0185 eV predominating. Variations in mobility due to changes in dielectric constant are also discussed.

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