Effect of the optical-phonon dispersion on the frequency and temperature dependence of the exciton attenuation in polar crystals

1999 ◽  
Vol 60 (8) ◽  
pp. 5470-5477 ◽  
Author(s):  
Nicolas I. Grigorchuk ◽  
Igor Yu. Goliney
2018 ◽  
Vol 32 (30) ◽  
pp. 1850340 ◽  
Author(s):  
Mahmoud Zolfaghari

With the help of temperature dependence, Raman scattering anharmonic effect of various modes of layered semiconductor InSe over temperature range of 20–650 K has been studied. It was found that with an increase in temperature, anharmonicity will increase. Two and three phonons coupling with optical phonon, are used to describe temperature-induced anharmonicity in the linewidth of Raman modes. It was found that the temperature variation of the phonon parameter can be accounted for well by the cubic term in anharmonic model. To describe line-center shift of Raman modes, a model not considering independently cubic and quartic anharmonicity was used. A similar study has been done for InSe doped with different concentration of GaS dopant. The result of temperature study of InSe doped with GaS revealed that in this case anharmonicity increases with an increase in dopant and an increase in temperature.


2013 ◽  
Vol 82 (9) ◽  
pp. 094606 ◽  
Author(s):  
Zi-Wu Wang ◽  
Lei Liu ◽  
Lin Shi ◽  
Xiao-Jing Gong ◽  
Wei-Ping Li ◽  
...  

1996 ◽  
Vol 226 (4) ◽  
pp. 331-337 ◽  
Author(s):  
Suruchi Anand ◽  
Prabhat Verma ◽  
K.P Jain ◽  
S.C Abbi

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