scholarly journals Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition

2020 ◽  
Vol 38 (4) ◽  
pp. 042405
Author(s):  
Kaupo Kukli ◽  
Marianna Kemell ◽  
Helena Castán ◽  
Salvador Dueñas ◽  
Joosep Link ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Silicon Oxides ◽  
Layer Deposition

Atomic layer deposition of cobalt carbide films and their magnetic properties using propanol as a reducing agent

2016 ◽  
Vol 379 ◽  
pp. 523-529 ◽  
Author(s):  
Mouhamadou Sarr ◽  
Naoufal Bahlawane ◽  
Didier Arl ◽  
Manuel Dossot ◽  
Edward McRae ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Reducing Agent ◽  
Layer Deposition ◽  
Cobalt Carbide

Resistive switching properties of polycrystalline HfOxNyfilms by plasma-enhanced atomic layer deposition

2017 ◽  
Vol 56 (5) ◽  
pp. 050304 ◽  
Author(s):  
Jue Yu ◽  
Wei Huang ◽  
Chao Lu ◽  
Guangyang Lin ◽  
Cheng Li ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Layer Deposition

Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

2012 ◽  
Vol 15 (4) ◽  
pp. H88 ◽  
Author(s):  
Ching-Shiang Peng ◽  
Wen-Yuan Chang ◽  
Yi-Hsuan Lee ◽  
Ming-Ho Lin ◽  
Frederick Chen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Al Doping ◽  
Layer Deposition ◽  
Switching Stability

Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition

2014 ◽  
Vol 116 (2) ◽  
pp. 663-669 ◽  
Author(s):  
Jian Zhang ◽  
Hui Yang ◽  
Qilong Zhang ◽  
Hao Jiang ◽  
Jikui Luo ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Ex Situ ◽  
Zno Thin Film ◽  
Layer Deposition

scholarly journals Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (27) ◽  
pp. 16704-16708 ◽  
Author(s):  
Masoud Akbari ◽  
Min-Kyu Kim ◽  
Dongshin Kim ◽  
Jang-Sik Lee
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Layer Deposition

The resistive switching behaviors of AlOX/HfOX bilayer structures were investigated.

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