Band offsets at amorphous hydrogenated boron nitride/high-k oxide interfaces from x-ray photoelectron spectroscopy with charging effects analysis

2020 ◽  
Vol 38 (3) ◽  
pp. 030601 ◽  
Author(s):  
Michelle M. Paquette ◽  
Anthony N. Caruso ◽  
Justin Brockman ◽  
Jeff Bielefeld ◽  
Markus Kuhn ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Oxide Interfaces ◽  
Band Offsets ◽  
X Ray ◽  
High K

Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy

2012 ◽  
Vol 258 (16) ◽  
pp. 6107-6110 ◽  
Author(s):  
J.J. Wang ◽  
Z.B. Fang ◽  
T. Ji ◽  
W.Y. Ren ◽  
Y.Y. Zhu ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Dielectric Films ◽  
Band Offsets ◽  
X Ray ◽  
Si Substrates ◽  
High K ◽  
High K Dielectric

scholarly journals Rhombohedral Boron Nitride Epitaxy on ZrB2

2020 ◽  
Author(s):  
Laurent Souqui ◽  
Justinas Palisaitis ◽  
Naureen Ghafoor ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Electron Microscopy ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Amorphous Material ◽  
Limited Area ◽  
Sem Images ◽  
Plan View ◽  
Minute Amount ◽  
X Ray ◽  
Rhombohedral Boron

<div>Epitaxial rhombohedral boron nitride films were deposited on ZrB<sub>2</sub>(0001)/4H-SiC(0001) by chemical vapor deposition at 1485 °C from the reaction of triethylboron and ammonia and with a minute amount of silane (SiH<sub>4</sub>). X-ray diffraction (XRD) φ-scans yield the epitaxial relationships of 𝑟−𝐵𝑁(0001)∥𝑍𝑟𝐵2(0001) out-of-plane and 𝑟−𝐵𝑁(1120)∥𝑍𝑟𝐵2(1120) in-plane. Cross-section transmission electron microscopy (TEM) micrographs showed that epitaxial break down of r-BN film occurs approximatively after 10 nm, above which epitaxial growth proceeds only in limited area up to 80 nm of film thickness. Both XRD and TEM demonstrate the formation of carbon- and nitrogen-containing cubic inclusions at the ZrB<sub>2</sub> surface. Quantitative analysis from X-ray photoelectron spectroscopy of the r-BN films shows B/N ratios between 1.30 to 1.20 and an O content of 3 to 4 at.%. Plan-view scanning electron microscopy (SEM) images reveal a surface morphology where an amorphous material comprising B, C, and N is surrounding the epitaxial twinned r-BN crystals. SiH<sub>4</sub> exposure prior to growth was found to reduce the amount of the amorphous phase on the surface. Defects such as pitting were also observed on the ZrB<sub>2</sub> template surface.</div><div><br></div>

X-ray photoelectron spectroscopy investigations of band offsets in Ga0.02Zn0.98O/ZnO heterojunction for UV photodetectors

2017 ◽  
Vol 122 (15) ◽  
pp. 155301 ◽  
Author(s):  
Karmvir Singh ◽  
Ishpal Rawal ◽  
Rajesh Punia ◽  
Rakesh Dhar
Keyword(s):  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
Uv Photodetectors ◽  
X Ray

Determination of the valence band offsets at HfO2 /InN(0001) and InN/In0.3 Ga0.7 N(0001) heterojunctions using X-ray photoelectron spectroscopy

2010 ◽  
Vol 207 (6) ◽  
pp. 1335-1337 ◽  
Author(s):  
Anja Eisenhardt ◽  
Andreas Knübel ◽  
Ralf Schmidt ◽  
Marcel Himmerlich ◽  
Joachim Wagner ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

X-ray photoelectron spectroscopy study of band offsets in a-Si0·2C0·8:H/p-(a-Si:H) and a-Si0·2C0·8:H/n-(a-Si:H) heterojunctions

1989 ◽  
Vol 60 (1) ◽  
pp. 51-60 ◽  
Author(s):  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Motohiro Iwami ◽  
Fumio Akao ◽  
Masahiro Yoshimoto ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Spectroscopy Study ◽  
Band Offsets ◽  
X Ray
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