Study of bilayer silylation process for 193 nm lithography using chemically amplified resist

1999 ◽  
Vol 17 (6) ◽  
pp. 3326
Author(s):  
I. Satou ◽  
K. Kuhara ◽  
M. Endo ◽  
H. Morimoto
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
193 Nm

Modification of development parameters of 193-nm chemically amplified resist with pattern density

2001 ◽  
Author(s):  
Eun-Jung Seo ◽  
Young-Soo Sohn ◽  
Heungin Bak ◽  
Hye-Keun Oh ◽  
Sang-Gyun Woo ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Pattern Density ◽  
Chemically Amplified Resist ◽  
193 Nm

Lithographic Materials Technologies: 193 nm Imaging and Beyond

1999 ◽  
Vol 584 ◽  
Author(s):  
Elsa Reichmanis ◽  
Omkaram Nalamasu ◽  
Francis M. Houlihan ◽  
Allen H. Gabor ◽  
Mark O. Neisser ◽  
...  
Keyword(s):  
Resolution Enhancement ◽  
Electronics Industry ◽  
Optical Lithography ◽  
Design Rule ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
193 Nm ◽  
Productivity Gains

AbstractAdvances in microlithographic resist materials have been a key enabler of the unabated productivity gains in the electronics industry and are continuing to help push the ultimate limits of optical lithography. The challenges posed by the introduction of new optical lithography technologies that use smaller wavelengths have been successfully met by the materials community through the design of chemically amplified resist technologies and 193 nm resist materials based on aliphatic polymers and dissolution inhibitors. With continued advances in resist materials, exposure systems and resolution enhancement and mask technologies, optical lithography will be capable of patterning ≤ 0.1 μm design rule devices in future fabs.

Evaluation of chemically amplified resist based on adamantyl methacrylate for 193-nm lithography

1995 ◽  
Author(s):  
Makoto Takahashi ◽  
Satoshi Takechi ◽  
Yuko Kaimoto ◽  
Isamu Hanyu ◽  
Naomichi Abe ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
193 Nm

Temperature rising effect of 193-nm chemically amplified resist during postexposure bake

2000 ◽  
Author(s):  
Young-Mi Lee ◽  
Moon-Gyu Sung ◽  
Eun-Mi Lee ◽  
Young-Soo Sohn ◽  
Heungin Bak ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
193 Nm

Soft bake effect in 193-nm chemically amplified resist

2000 ◽  
Author(s):  
Moon-Gyu Sung ◽  
Young-Mi Lee ◽  
Eun-Mi Lee ◽  
Young-Soo Sohn ◽  
Ilsin An ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Soft Bake ◽  
Chemically Amplified Resist ◽  
193 Nm

Novel single-layer chemically amplified resist for 193-nm lithography

1997 ◽  
Author(s):  
Sang-Jun Choi ◽  
Yool Kang ◽  
Dong-Won Jung ◽  
Chun-Geun Park ◽  
Joo-Tae Moon
Keyword(s):  
Single Layer ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
193 Nm

scholarly journals Chemically Amplified Resist Based on High Etch-Resistant Polymers for 193-nm Lithography.

1997 ◽  
Vol 10 (4) ◽  
pp. 561-569 ◽  
Author(s):  
Kaichiro Nakano ◽  
Katsumi Maeda ◽  
Shigeyuki Iwasa ◽  
Etsuo Hasegawa
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
193 Nm
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