Development of self-aligned contact technology for 0.18 μm static random access memory devices

1999 ◽  
Vol 17 (5) ◽  
pp. 2373 ◽  
Author(s):  
Jianmin Qiao ◽  
Bo Jin ◽  
Prashant Phatak ◽  
Jengyi Yu ◽  
Sam Geha
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Memory Devices ◽  
Access Memory

scholarly journals Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices

2020 ◽  
Vol 69 (5) ◽  
pp. 056101
Author(s):  
Zhan-Gang Zhang ◽  
Zhi-Feng Lei ◽  
Teng Tong ◽  
Xiao-Hui Li ◽  
Song-Lin Wang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Memory Devices ◽  
Single Event ◽  
Access Memory ◽  
Single Event Upsets

scholarly journals Triggering WORM/SRAM Memory Conversion by Composite Oxadiazole in Polymer Resistive Switching Device

2019 ◽  
Vol 2019 ◽  
pp. 1-8
Author(s):  
Enming Zhao ◽  
Xiaodan Liu ◽  
Guangyu Liu ◽  
Bao Zhou
Keyword(s):  
Charge Transfer ◽  
Small Molecule ◽  
Random Access ◽  
Electrical Characterization ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Internal Electrode ◽  
Switching Device

Electrical characterization indicates that the nonvolatile write once read many (WORM) times/volatile static random access memory (SRAM) conversion was triggered by the composite of the oxadiazole small molecule. FTO/PMMA/Ag device possesses nonvolatile WORM memory behavior, while the FTO/PMMA+oxadiazole/Ag device shows vastly different volatile SRAM feature. The FTO/PMMA/Ag and FTO/PMMA+oxadiazole/Ag memory devices both exhibit high ON/OFF ratio nearly 104. The additive oxadiazole small molecule in the polymethyl methacrylate was suggested to form an internal electrode and serve as a channel during the charge transfer process, which is easy to both the charge transfer and back charge transfer, as a consequence, the WORM/SRAM conversion upon oxadiazole small molecule complexation was triggered. The results observed in this work manifest the significance of oxadiazole small molecule to the memory effects and will arouse the research interest about small molecule composite applied in memory devices.

Design and synthesis of hyperbranched polyimide containing multi-triphenylamine moieties for memory devices

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93094-93102 ◽  
Author(s):  
Ying Song ◽  
Hongyan Yao ◽  
Yunxia Lv ◽  
Shiyang Zhu ◽  
Shanyou Liu ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Static Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Current Ratio ◽  
Design And Synthesis ◽  
Switch Voltage

A hyperbranched polyimide (HBPI) was synthesized from a designed triamine monomer and the HBPI based memory device presented SRAM (static random access memory) behavior with a low switch voltage and high ON/OFF current ratio.

Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons

2019 ◽  
Vol 28 (10) ◽  
pp. 104212
Author(s):  
Xiao-Ming Jin ◽  
Wei Chen ◽  
Jun-Lin Li ◽  
Chao Qi ◽  
Xiao-Qiang Guo ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Memory Devices ◽  
Single Event Upset ◽  
Single Event ◽  
Access Memory

Analysis of FSRAM Single Bit Failures Due to Unique Dislocations

1998 ◽  
Author(s):  
Phil Schani ◽  
S. Subramanian ◽  
Vince Soorholtz ◽  
Pat Liston ◽  
Jamey Moss ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Temperature Sensitive ◽  
Wafer Level ◽  
Top Down ◽  
Access Memory ◽  
Transmission Electron ◽  
Contact Processing

Abstract Temperature sensitive single bit failures at wafer level testing on 0.4µm Fast Static Random Access Memory (FSRAM) devices are analyzed. Top down deprocessing and planar Transmission Electron Microscopy (TEM) analyses show a unique dislocation in the substrate to be the cause of these failures. The dislocation always occurs at the exact same location within the bitcell layout with respect to the single bit failing data state. The dislocation is believed to be associated with buried contact processing used in this type of bitcell layout.

Challenges and Benefits of Product-Like SRAM in Technology Development

2011 ◽  
Author(s):  
Felix Beaudoin ◽  
Stephen Lucarini ◽  
Fred Towler ◽  
Stephen Wu ◽  
Zhigang Song ◽  
...  
Keyword(s):  
Technology Development ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Development Phase ◽  
High Complexity ◽  
Access Memory ◽  
Integration Schemes ◽  
Front End

Abstract For SRAMs with high logic complexity, hard defects, design debug, and soft defects have to be tackled all at once early on in the technology development while innovative integration schemes in front-end of the line are being validated. This paper presents a case study of a high-complexity static random access memory (SRAM) used during a 32nm technology development phase. The case study addresses several novel and unrelated fail mechanisms on a product-like SRAM. Corrective actions were put in place for several process levels in the back-end of the line, the middle of the line, and the front-end of the line. These process changes were successfully verified by demonstrating a significant reduction of the Vmax and Vmin nest array block fallout, thus allowing the broader development team to continue improving random defectivity.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory
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