Behavior of a new ordered structural dopant source in InAs/(001) GaP heterostructures

1999 ◽  
Vol 17 (4) ◽  
pp. 1767 ◽  
Author(s):  
V. Gopal ◽  
E.-H. Chen ◽  
E. P. Kvam ◽  
J. M. Woodall
Keyword(s):  
Dopant Source

Activation of two dopants, Bi and Er in δ-doped layer in Si crystal

Nano Futures ◽  
2021 ◽  
Vol 5 (4) ◽  
pp. 045005
Author(s):  
Koichi Murata ◽  
Shuhei Yagi ◽  
Takashi Kanazawa ◽  
Satoshi Tsubomatsu ◽  
Christopher Kirkham ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Silicon Crystal ◽  
Electric Transport ◽  
Photoluminescence Study ◽  
Post Annealing ◽  
Surface Nanostructures ◽  
Doping Technique ◽  
Dopant Source

Abstract Conventional doping processes are no longer viable for realizing extreme structures, such as a δ-doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)-δ-doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The concentration of both Er and Bi dopants is controlled by adjusting the amount of deposited Er atoms, the growth temperature during Si capping and surfactant techniques. Subsequent post-annealing processing is essential in this doping technique to obtain activated dopants in the δ-doped layer. Electric transport measurement and photoluminescence study revealed that both Bi and Er dopants were activated after post-annealing at moderate temperature.

Doping Study of Se into AlGaAs Layers Grown by MBE, and their Application to HEMT Structures

1988 ◽  
Vol 144 ◽  
Author(s):  
T. Maed ◽  
T. Ishikawa ◽  
K. Kondo
Keyword(s):  
Molecular Beam ◽  
Electron Gas ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Si Doping ◽  
Se Doping ◽  
Si Doped ◽  
Dx Center ◽  
Dimensional Electron Gas ◽  
Dopant Source

ABSTRACTWe studied doping Se into AlGaAs layers using PbSe as a dopant source for molecular beam epitaxy (MBE). Good controllability and abruptness equivalent to that of Si-doping were obtained. Se-doping was successfully applied to HEMT structures with reduced DX center concentrations. The two dimensional electron gas (2DEG) characteristics of these structures were comparable to those of Si-doped structures.

Growth of polycrystalline and single-crystal CVD diamonds with bright photoluminescence of Ge-V color centers using germane GeH4 as the dopant source

2018 ◽  
Vol 90 ◽  
pp. 47-53 ◽  
Author(s):  
V. Sedov ◽  
A. Martyanov ◽  
S. Savin ◽  
A. Bolshakov ◽  
E. Bushuev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Color Centers ◽  
Dopant Source

Al-Doped TiO2 Nanotube Arrays Achieved by Using Low Boiling AlCl3 as a Dopant Source for Supercapacitors

2019 ◽  
Vol 166 (16) ◽  
pp. A3889-A3895
Author(s):  
Lizhen Wu ◽  
Shikai Cao ◽  
Zongrong Ying ◽  
Wenqiang Huang ◽  
Dawei Xu ◽  
...  
Keyword(s):  
Tio2 Nanotube Arrays ◽  
Tio2 Nanotube ◽  
Nanotube Arrays ◽  
Doped Tio2 ◽  
Dopant Source

Spectroscopic Investigations of Borosilicate Glass and Its Application as a Dopant Source for Shallow Junctions

2000 ◽  
Vol 147 (8) ◽  
pp. 3100 ◽  
Author(s):  
M. Nolan ◽  
T. S. Perova ◽  
R. A. Moore ◽  
C. E. Beitia ◽  
J. F. McGilp ◽  
...  
Keyword(s):  
Borosilicate Glass ◽  
Spectroscopic Investigations ◽  
Shallow Junctions ◽  
Dopant Source
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