Submicron patterned doping of GaAs using a thin solid Si dopant source by transient excimer laser melting

1988 ◽  
Vol 6 (3) ◽  
pp. 850 ◽  
Author(s):  
Koji Sugioka
Keyword(s):  
Excimer Laser ◽  
Laser Melting ◽  
Dopant Source

Location Control of Laterally Columnar Si Grains by Dual-Beam Excimer-Laser Melting of Si Thin-Film

2000 ◽  
Vol 621 ◽  
Author(s):  
Ryoichi Ishihara
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Heat Source ◽  
Grain Boundaries ◽  
Excimer Laser ◽  
Laser Melting ◽  
Dual Beam ◽  
Single Grain ◽  
Free Area ◽  
Si Thin Film

ABSTRACTThe offset of the underlying TiW is introduced in the island of Si, SiO2 and TiW on glass. During the dual-beam excimer-irradiation to the Si and the TiW, the offset in TiW acts as an extra heat source, which melts completely the Si film near the edge, whereas the Si inside is partially melted. The laterally columnar Si grains with a length of 3.2 μm were grown from the inside of the island towards the edge. By changing the shape of the edge, the direction of the solidification of the grain was successfully controlled in such a way that the all grain-boundaries are directed towards the edge and a single grain expands. The grain-boundary-free area as large as 4 μm × 3 μm was obtained at a predetermined position of glass.

Suppression of Dewetting in Pulsed Laser Melting of Thin Metallic Films on SiO2

2004 ◽  
Vol 854 ◽  
Author(s):  
J. Eric Kline ◽  
John P. Leonard
Keyword(s):  
Sample Preparation ◽  
Excimer Laser ◽  
Pulsed Laser ◽  
Metal Films ◽  
Processing Maps ◽  
Basic Process ◽  
Metallic Films ◽  
Laser Melting ◽  
Process Map ◽  
Experimental Parameters

ABSTRACTPulsed excimer laser projection irradiation has been successfully applied to completely melt and resolidify encapsulated elemental metal films of Au, Cu, Cr, and Ni directly on amorphous SiO2 substrates. A combination of narrow irradiated lines and appropriate SiO2 capping layers was used to obtain films that do not dewet when fully melted. Detailed processing maps were generated for Au and Ni, while equivalent trends for Cu and Cr were also noted. These systems were analyzed for common behaviors, and from these the principle factors, a basic process map is proposed to describe adequately these four systems. Experimental parameters and sample preparation criteria are presented to realize such resolidification studies in other metal systems.

scholarly journals Migration of Carbon in Tempered Martensitic Steel During Excimer Laser Melting

1989 ◽  
Vol 157 ◽  
Author(s):  
J-P. Hirvonen ◽  
T. R. Jervis ◽  
T. G. Zocco
Keyword(s):  
Excimer Laser ◽  
Diffusion Length ◽  
Martensitic Steel ◽  
Laser Pulses ◽  
Nominal Composition ◽  
Laser Melting ◽  
Controlled Flow ◽  
Homogeneous Media ◽  
Depth Concentration ◽  
Ion Implanted

ABSTRACTThe migration of ion implanted 13C in tempered martensitic steel (nominal composition 1.05 wt. % C, 0.2 wt. % Si, and 0.3 wt. % Mn) during excimer laser melting was examined utilizing the resonance of the l3C(p,γ)14N reaction at Ep = 1747.6 keV. Depth concentration profiles after five and ten laser pulses of 1 J/cm2 revealed a deviation from random walk diffusion in a homogeneous media. This was modelled by using partitionless solidification and solubility controlled flow of carbon in the iron-carbon melt. A diffusion length of nm during the period to τ the melted phase was deduced. Ion implanted surfaces were initially crystalline but significant crystalline to amorphous transformation occurred following laser treatment.

Location Control of Crystal Si Grain Followed by Excimer-Laser Melting of Si Thin-Films

1998 ◽  
Vol 37 (Part 2, No. 1A/B) ◽  
pp. L15-L17 ◽  
Author(s):  
Ryoichi Ishihara ◽  
Paul Ch. van der Wilt
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Melting

Enhanced photoluminescent emission of thin phosphor films via pulsed excimer laser melting

1998 ◽  
Vol 13 (11) ◽  
pp. 3019-3021 ◽  
Author(s):  
J. McKittrick ◽  
G. A. Hirata ◽  
C. F. Bacalski ◽  
R. Sze ◽  
J. Mourant ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Emission Intensity ◽  
Chemical Vapor ◽  
Spherical Particles ◽  
Laser Melting ◽  
Sapphire Substrates ◽  
Krf Laser

Thin films of (Y0.92Eu0.08)2O3 were synthesized through chemical vapor deposition of β-diketonate precursors onto glass and sapphire substrates. The films were weakly luminescent in the as-deposited condition and were composed of spherical particles 3 μm in diameter. A KrF laser was pulsed for 25 ns from 1–3 times on the surface of the films. One pulse was sufficient to melt the film and repeated pulses caused ablation of the material. Melting of the film smoothed the surface, increased the density, and increased the photoluminescent emission intensity.

Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1071-1075 ◽  
Author(s):  
Ryoichi Ishihara ◽  
Artyom Burtsev
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Melting
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