A comparative study of Si doping in GaAs layers grown by molecular beam epitaxy on GaAs(110) and GaAs(001) surfaces
1994 ◽
Vol 33
(Part 2, No. 3B)
◽
pp. L413-L416
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2003 ◽
Vol 0
(7)
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pp. 2814-2817
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2007 ◽
Vol 301-302
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pp. 410-413
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2002 ◽
Vol 20
(6)
◽
pp. 2256
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1985 ◽
Vol 3
(2)
◽
pp. 676
◽
2006 ◽
Vol 35
(2)
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pp. 266-272
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