Larger critical thickness determined by photoluminescence measurements in pseudomorphic In[sub 0.25]Ga[sub 0.75]As/Al[sub 0.32]Ga[sub 0.68]As quantum well grown on (411)A GaAs substrates by molecular beam epitaxy

1999 ◽  
Vol 17 (3) ◽  
pp. 1167 ◽  
Author(s):  
K. Nii ◽  
R. Kuriyama ◽  
T. Hiraoka ◽  
T. Kitada ◽  
S. Shimomura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Gaas Substrates

Gas Source Molecular Beam Epitaxy of ZnSe on (In,Ga)P

1994 ◽  
Vol 340 ◽  
Author(s):  
K. Lu ◽  
P.A. Fisher ◽  
E. Ho ◽  
J.L. House ◽  
G.S. Petrich ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Buffer Layers ◽  
Ex Situ ◽  
Material System ◽  
Lattice Constants ◽  
Gas Source ◽  
Gaas Substrates ◽  
Lattice Matched

ABSTRACTThe wide bandgap semiconductor ZnSe has been nucleated on epitaxial (In,Ga)P buffer layers (on GaAs substrates) having various In compositions, and hence various lattice constants. The III-V ternary alloy offers a wide range of lattice constants for the heteroepitaxy of a multitude of potential II-VI light emitting devices, such as blue pn injection lasers composed of the (Zn,Mg)(S,Se) material system. Since the II-VI and III-V layers are grown using gas source molecular beam epitaxy in separate dedicated reactors, the technique of amorphous As deposition is employed to passivate the (In,Ga)P surface prior to the ex situ transfer. High resolution double crystal x-ray diffraction measurements on the ZnSe/(In,Ga)P/GaAs heterostructures indicate that for In compositions of 50-52%, the buffer layers with a thickness of 4 μm were only partially relaxed on the GaAs substrates, with the residual mismatch remaining at the ZnSe/III-V heterointerface. The critical thickness of (In,Ga)P, with In concentrations near 52-56%, on GaAs greatly exceeds the predicted critical thickness from either the energy balancing or force balancing model. For an In composition of 56% (and a film thickness of 4 μm), the buffer layers contain an in-plane lattice constant equal to that of ZnSe, and therefore represent the lattice-matched condition, even though the film is not fully relaxed. For (In,Ga)P buffer layers lattice-matched to ZnSe, but mismatched to GaAs, the surface exhibits the expected cross-hatched surface morphology. The occurrence of the cross-hatched surface is significantly alleviated by the addition of a pseudomorphic layer of GaAs positioned between the ZnSe and (In,Ga)P layer.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Optical Properties of Zn1-xCdxSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers
Sign in / Sign up

Export Citation Format

Share Document