Low-voltage electron emission from chemical vapor deposition graphite films

1999 ◽  
Vol 17 (2) ◽  
pp. 674 ◽  
Author(s):  
A. N. Obraztsov ◽  
I. Yu. Pavlovsky ◽  
A. P. Volkov
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Emission ◽  
Vapor Deposition ◽  
Low Voltage ◽  
Chemical Vapor ◽  
Voltage Electron

scholarly journals Dual-gate low-voltage transparent electric-double-layer thin-film transistors with a top gate for threshold voltage modulation

RSC Advances ◽  
2020 ◽  
Vol 10 (14) ◽  
pp. 8093-8096
Author(s):  
Wei Dou ◽  
Yuanyuan Tan
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Double Layer ◽  
Vapor Deposition ◽  
Electric Double Layer ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Chemical Vapor ◽  
Dual Gate ◽  
Layer Thin Film

Dual gate (DG) low-voltage transparent electric-double-layer (EDL) thin-film transistors (TFTs) with microporous-SiO2 for both top and bottom dielectrics have been fabricated, both dielectrics were deposited by plasma-enhanced chemical vapor deposition (PECVD).

Field Emission of Aluminum Nitride Nanocones Deposited on Titanium Substrate

2010 ◽  
Vol 129-131 ◽  
pp. 476-481 ◽  
Author(s):  
Ye Min Hu ◽  
Zheng Hu ◽  
Fan Zhang ◽  
Ying Li ◽  
Ming Yuan Zhu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Silicon Wafer ◽  
Field Emission ◽  
Electron Emission ◽  
Vapor Deposition ◽  
Titanium Substrate ◽  
Chemical Vapor ◽  
Emission Measurement ◽  
Turn On

We report the preparation of quasi-arrays of aluminum nitride nanocones via chemical vapor deposition on nitriding treated titanium substrate at 800 °C through the reaction between AlCl3 vapor and NH3/N2 gas. The field emission measurement exhibits a fine electron emission with the turn-on field of 10.7 V/mm, which is quite smaller than the turn-on field of 41.3 V/μm for aluminum nitride nanocones deposited on silicon wafer in our previous works. The reduction of turn-on field is attributed to the formation of a layer of conductive tiannium nitride on titanium substrate during the nitriding treatment.

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