Dissolution characteristics of chemically amplified 193 nm resists

1998 ◽  
Vol 16 (6) ◽  
pp. 3726 ◽  
Author(s):  
Toshiro Itani
Keyword(s):  
Chemically Amplified ◽  
193 Nm

Chemically amplified photoresists for 193-nm photolithography: Effect of molecular structure and photonic parameters on photopatterning

2010 ◽  
Vol 48 (6) ◽  
pp. 1271-1277 ◽  
Author(s):  
Hassan Ridaoui ◽  
Ali Dirani ◽  
Olivier Soppera ◽  
Esma Ismailova ◽  
Cyril Brochon ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Chemically Amplified ◽  
193 Nm

Microlithographic Assessment of a Novel Family of Transparent and Etch-Resistant Chemically Amplified 193-nm Resists Based on Cyclopolymers

2001 ◽  
Vol 13 (11) ◽  
pp. 4147-4153 ◽  
Author(s):  
John M. Klopp ◽  
Dario Pasini ◽  
Jeffrey D. Byers ◽  
C. Grant Willson ◽  
Jean M. J. Fréchet
Keyword(s):  
Chemically Amplified ◽  
193 Nm

Refractive index change during exposure for 193-nm chemically amplified resists

1999 ◽  
Author(s):  
Hye-Keun Oh ◽  
Young-Soo Sohn ◽  
Moon-Gyu Sung ◽  
Young-Mi Lee ◽  
Eun-Mi Lee ◽  
...  
Keyword(s):  
Refractive Index ◽  
Refractive Index Change ◽  
Index Change ◽  
Chemically Amplified ◽  
Chemically Amplified Resists ◽  
193 Nm

Modification of development parameters of 193-nm chemically amplified resist with pattern density

2001 ◽  
Author(s):  
Eun-Jung Seo ◽  
Young-Soo Sohn ◽  
Heungin Bak ◽  
Hye-Keun Oh ◽  
Sang-Gyun Woo ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Pattern Density ◽  
Chemically Amplified Resist ◽  
193 Nm

Lithographic Materials Technologies: 193 nm Imaging and Beyond

1999 ◽  
Vol 584 ◽  
Author(s):  
Elsa Reichmanis ◽  
Omkaram Nalamasu ◽  
Francis M. Houlihan ◽  
Allen H. Gabor ◽  
Mark O. Neisser ◽  
...  
Keyword(s):  
Resolution Enhancement ◽  
Electronics Industry ◽  
Optical Lithography ◽  
Design Rule ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
193 Nm ◽  
Productivity Gains

AbstractAdvances in microlithographic resist materials have been a key enabler of the unabated productivity gains in the electronics industry and are continuing to help push the ultimate limits of optical lithography. The challenges posed by the introduction of new optical lithography technologies that use smaller wavelengths have been successfully met by the materials community through the design of chemically amplified resist technologies and 193 nm resist materials based on aliphatic polymers and dissolution inhibitors. With continued advances in resist materials, exposure systems and resolution enhancement and mask technologies, optical lithography will be capable of patterning ≤ 0.1 μm design rule devices in future fabs.

Acid amplification of chemically amplified resists for 193-nm lithography

1997 ◽  
Author(s):  
Takeshi Ohfuji ◽  
Makoto Takahashi ◽  
Koichi Kuhara ◽  
Tohru Ogawa ◽  
Hiroshi Ohtsuka ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resists ◽  
193 Nm

Non-chemically amplified resists for 193 nm lithography

2008 ◽  
Author(s):  
Isao Nishimura ◽  
William H. Heath ◽  
Kazuya Matsumoto ◽  
Wei-Lun Jen ◽  
Saul S. Lee ◽  
...  
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resists ◽  
193 Nm

scholarly journals Characterization of Chemically Amplified Resists with "Acid Amplifier" for 193 nm Lithography.

1997 ◽  
Vol 10 (4) ◽  
pp. 551-558 ◽  
Author(s):  
Takeshi Ohfuji ◽  
Makoto Takahashi ◽  
Masaru Sasago ◽  
Soh Noguchi ◽  
Kunihiro Ichimura
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resists ◽  
193 Nm ◽  
Acid Amplifier
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